XFXiaoyue Fan

Xiaoyue Fan

*This is an algorithmically generated author record based on publicly available information.

Current Organizations / Institutes

The organizations/institutes from the scholar's latest article


Xiaoyue Fan has a total of 19 co-authors. Here are the top co-authors by number of shared publications:

  • Gang Wang

    Beijing Institute of Technology

    3 shared publications
  • Haiyang Liu

    Centre for Quantum Physics, Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement (MOE), School of Physics, Beijing Institute of Technology, Beijing 100081, China

    3 shared publications
  • Tianhong Tang

    Centre for Quantum Physics, Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement (MOE), School of Physics, Beijing Institute of Technology, Beijing 100081, China

    3 shared publications
  • Binghui Niu

    Centre for Quantum Physics, Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement (MOE), School of Physics, Beijing Institute of Technology, Beijing 100081, China

    2 shared publications
  • Lei Xiong

    Centre for Quantum Physics, Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement (MOE), School of Physics, Beijing Institute of Technology, Beijing 100081, China

    2 shared publications
  • Wei Qiao

    Centre for Quantum Physics, Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement (MOE), School of Physics, Beijing Institute of Technology, Beijing 100081, China

    2 shared publications

Latest Publications

  • Open Access

    Third Harmonic Generation in Thin NbOI2 and TaOI2

    by Tianhong Tang, Deng Hu, Di Lin, Liu Yang, Ziling Shen, Wenchen Yang, Haiyang Liu, Hanting Li, Xiaoyue Fan, Zhiwei Wang, et al.

    The niobium oxide dihalides have recently been identified as a new class of van der Waals materials exhibiting exceptionally large second-order nonlinear optical responses and robust in-plane ferroelectricity. In contrast to second-order nonlinear processes, third-order optical nonlinearities can arise irrespective of whether a crystal lattice is centrosymmetric. Here, we report third harmonic generation (THG) in two-dimensional (2D) transition metal oxide iodides, namely NbOI2 and TaOI2. We observe a comparable THG intensity from both materials. By benchmarking against THG from monolayer WS2, we deduce that the third-order susceptibility is approximately on the same order. THG resonances are revealed at different excitation wavelengths, likely due to enhancement by excitonic states and band edge resonances. The THG intensity increases for material thicknesses up to 30 nm, owing to weak interlayer coupling. After this threshold, it shows saturation or a decrease, due to optical interference effects. Our results establish niobium and tantalum oxide iodides as promising 2D materials for third-order nonlinear optics, with intrinsic in-plane ferroelectricity and thickness-tunable nonlinear efficiency.


  • Open Access

    Twist Angle-Dependent Interlayer Exciton in MoS2 Bilayers Revealed by Room-Temperature Reflectance

    by Lei Xiong, Tianhong Tang, Xiaoyue Fan, Haiyang Liu, Peng Zhu, Xiaolan Zhang, Wei Qiao, Qinsheng Wang, Zhiwei Wang, Binghui Niu, et al.

    In 2H stacking bilayer MoS2, the exciton with an interlayer nature has been evidenced due to the hybridization of hole states among both layers. The transition energy of this interlayer exciton is located between the A and B excitons. In this work, we investigate the evolution of optical properties in stacking MoS2 bilayers with the twisted angles ranging from 0° to 60°, especially focusing on the interlayer exciton. The clear modulations of the exciton responses are observed by the room-temperature reflectance. The interlayer exciton transition is observed in the artificial stacking bilayer MoS2 with the twisted angle around 60°. We found that the interlayer exciton is very sensitive to the twisted angle. Once the stacking angle deviates the 2H stacking by a few degrees, the interlayer transition is quenched. This is due to the bilayer symmetry and interlayer coupling of this unique system.


  • Open Access

    Interlayer Coupling and Pressure Engineering in Bilayer MoS2

    by Wei Qiao, Hao Sun, Xiaoyue Fan, Meiling Jin, Haiyang Liu, Tianhong Tang, Lei Xiong, Binghui Niu, Xiang Li, Gang Wang

    Controlling the interlayer coupling by tuning lattice parameters through pressure engineering is an important route for tailoring the optoelectronic properties of two-dimensional materials. In this work, we report a pressure-dependent study on the exciton transitions of bilayer MoS2 exfoliated on a diamond anvil surface. The applied hydrostatic pressure changes from ambient pressure up to 11.05 GPa using a diamond anvil cell device. Raman, photoluminescence, and reflectivity spectra at room temperature are analyzed to characterize the interlayer coupling of this bilayer system. With the increase of pressure, the indirect exciton emission disappears completely at about 5 GPa. Importantly, we clearly observed the interlayer exciton from the reflectivity spectra, which becomes invisible at a low pressure around 1.26 GPa. This indicates that the interlayer exciton is very sensitive to the hydrostatic pressure due to the oscillator strength transfer from the direct transition to the indirect one.