Chenxin Liu
Current Organizations / Institutes
The organizations/institutes from the scholar's latest article
Previous Organizations / Institutes
The organizations / institutes from the scholar's other articles in the past ten years
Research Subjects
Chenxin Liu has a total of 106 co-authors. Here are the top co-authors by number of shared publications:
- Kenichi Okada
Department of Electrical and Electronic Engineering, Institute of Science Tokyo, Tokyo, Japan
17 shared publications - Hiroyuki Sakai
Department of Electrical and Electronic Engineering, Institute of Science Tokyo, Tokyo, Japan
11 shared publications - Kazuaki Kunihiro
Department of Electrical and Electronic Engineering, Institute of Science Tokyo, Tokyo, Japan
9 shared publications - Yudai Yamazaki
Department of Electrical and Electronic Engineering, Institute of Science Tokyo, Tokyo, Japan
8 shared publications Atsushi Shirane
Department of Electrical and Electronic Engineering, School of Engineering, Tokyo Institute of Technology, Tokyo, Japan
7 shared publications- Atsushi Shirane
Department of Electrical and Electronic Engineering, Institute of Science Tokyo, Tokyo, Japan
7 shared publications
Latest Publications
- Open Access
- 27 May 2026
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Journal of Solid-State Circuits
- Vol. PP (00189200) , 1-21
A Ka-Band Eight-Stream Phased-Array MIMO Receiver With Time-Hopping Blocker Rejection for 6G
This article presents a Ka-band phased-array multiple-input multiple-output (MIMO) receiver for sixth-generation (6G) wireless networks. A time-division (TD) MIMO architecture is combined with DP antenna array to support eight MIMO streams in the Ka band. The complex weights of each RF element in both polarization arrays are sequentially switched at the Nyquist rate to enable fast-stream switching for MIMO stream coexistence. The TD approach achieves full phased-array reuse and delivers high array gain and spatial selectivity for each stream at the expense of generating switching harmonics. To address this issue, a non-uniform time-hopping (TH) sequence is introduced in this article to spectrally spread the switching harmonics and mitigate the direct blocker folding. A proof-of-concept phased-array receiver is fabricated in 65-nm CMOS, integrating eight RF elements in a 7.2-mm2 core area and consuming 335.2 mW. Combined with DP antennas, the phased-array receiver supports $4 \times 4$ TD-MIMO across both polarizations and achieves a maximum data rate of 38.4Gb/s using eight 800-MHz 64-QAM signals in over-the-air (OTA) measurements. Benefiting from the TD-MIMO architecture, the phased-array receiver achieves 0.078 mm2 and 5.23 mW per element per stream. With the proposed non-uniform TH (NUTH) dithering, deep notches are generated at switching harmonics and 42.9-dB alias suppression is achieved. The proposed phased-array receiver also demonstrates a 34-dB improvement in blocker tolerance, maintaining –30-dB EVMrms under a 0-dBc in-band blocker sweeping across –90° to 90° field of view (FoV) in MIMO OTA measurements.
- 27 May 2026
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Journal of Solid-State Circuits
- Vol. PP (00189200) , 1-21
Open AccessA Ka-Band Eight-Stream Phased-Array MIMO Receiver With Time-Hopping Blocker Rejection for 6G
This article presents a Ka-band phased-array multiple-input multiple-output (MIMO) receiver for sixth-generation (6G) wireless networks. A time-division (TD) MIMO architecture is combined with DP antenna array to support eight MIMO streams in the Ka band. The complex weights of each RF element in both polarization arrays are sequentially switched at the Nyquist rate to enable fast-stream switching for MIMO stream coexistence. The TD approach achieves full phased-array reuse and delivers high array gain and spatial selectivity for each stream at the expense of generating switching harmonics. To address this issue, a non-uniform time-hopping (TH) sequence is introduced in this article to spectrally spread the switching harmonics and mitigate the direct blocker folding. A proof-of-concept phased-array receiver is fabricated in 65-nm CMOS, integrating eight RF elements in a 7.2-mm2 core area and consuming 335.2 mW. Combined with DP antennas, the phased-array receiver supports $4 \times 4$ TD-MIMO across both polarizations and achieves a maximum data rate of 38.4Gb/s using eight 800-MHz 64-QAM signals in over-the-air (OTA) measurements. Benefiting from the TD-MIMO architecture, the phased-array receiver achieves 0.078 mm2 and 5.23 mW per element per stream. With the proposed non-uniform TH (NUTH) dithering, deep notches are generated at switching harmonics and 42.9-dB alias suppression is achieved. The proposed phased-array receiver also demonstrates a 34-dB improvement in blocker tolerance, maintaining –30-dB EVMrms under a 0-dBc in-band blocker sweeping across –90° to 90° field of view (FoV) in MIMO OTA measurements.
- Open Access
- 3 March 2026
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Journal of Solid-State Circuits
- Vol. 61 (4) , 1275-1293
A 142–164-GHz Phased-Array AiP Module With High-Power-Density and High-Efficiency Transceiver in 65-nm CMOS for 6G UE
This work presents a D-band high-power-density four-element phased-array transceiver for 6G user equipment (UE). Conventional designs require large multi-stage LO generation circuits for D-band up/down conversion, making it difficult to achieve compact size and low-power consumption. To address this, we propose an integrated LO chain using an injection-locked tripling phase shifter (ILTPS), which enables both frequency tripling and phase shifting within a single circuit without multi-stage amplifiers. The ILTPS achieves an area of 0.088 mm2 and a power consumption of 15 mW. In addition, to realize high power density, the transceiver integrates a bi-active sub-harmonic mixer (BA-SHM) and a D-band PA/LNA with PA-sharing TDD switching. An eight-element antenna-in-package (AiP) module using two transceiver ICs operates in the 142–164-GHz frequency range, achieving an EIRP of 25.7 dBm and a maximum data rate of 56 Gbps. The power consumption per element is 150 mW in TX mode and 93 mW in RX mode with 1 V VDD. The active area of this transceiver is 8.5 mm2, and it is implemented using a 65 nm CMOS process.
- 3 March 2026
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Journal of Solid-State Circuits
- Vol. 61 (4) , 1275-1293
Open AccessA 142–164-GHz Phased-Array AiP Module With High-Power-Density and High-Efficiency Transceiver in 65-nm CMOS for 6G UE
This work presents a D-band high-power-density four-element phased-array transceiver for 6G user equipment (UE). Conventional designs require large multi-stage LO generation circuits for D-band up/down conversion, making it difficult to achieve compact size and low-power consumption. To address this, we propose an integrated LO chain using an injection-locked tripling phase shifter (ILTPS), which enables both frequency tripling and phase shifting within a single circuit without multi-stage amplifiers. The ILTPS achieves an area of 0.088 mm2 and a power consumption of 15 mW. In addition, to realize high power density, the transceiver integrates a bi-active sub-harmonic mixer (BA-SHM) and a D-band PA/LNA with PA-sharing TDD switching. An eight-element antenna-in-package (AiP) module using two transceiver ICs operates in the 142–164-GHz frequency range, achieving an EIRP of 25.7 dBm and a maximum data rate of 56 Gbps. The power consumption per element is 150 mW in TX mode and 93 mW in RX mode with 1 V VDD. The active area of this transceiver is 8.5 mm2, and it is implemented using a 65 nm CMOS process.
- Open Access
- 13 February 2026
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Terahertz Science and Technology
- Vol. 16 (5) , 555-563
A 110–170 GHz Stacked-PCB-Based Pyramidal Horn Antenna With Flexible Stacking
This article presents a stacked-PCB-based broadband D-band horn antenna with high efficiency fabricated using a conventional PCB process. By replacing the conventional multilayered PCB with multiple stacked single-layer PCBs, the dielectric material inside the horn aperture is removed, and the antenna walls can be formed using vertically aligned through-holes. This architecture enables flexible stacking, allowing the aperture size to be scaled simply by adjusting the number of layers, which in turn scales the antenna gain. These modifications also lead to improved antenna characteristics, including gain and radiation pattern. The measured reflection coefficient remains below −18 dB across the entire D-band (110–170 GHz). The sidelobe is less than −10 dB and cross-polarization discrimination is lower than −30 dB. The gain is measured to be 19.8 $\pm$ 1.7 dB.
- 13 February 2026
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Terahertz Science and Technology
- Vol. 16 (5) , 555-563
Open AccessA 110–170 GHz Stacked-PCB-Based Pyramidal Horn Antenna With Flexible Stacking
This article presents a stacked-PCB-based broadband D-band horn antenna with high efficiency fabricated using a conventional PCB process. By replacing the conventional multilayered PCB with multiple stacked single-layer PCBs, the dielectric material inside the horn aperture is removed, and the antenna walls can be formed using vertically aligned through-holes. This architecture enables flexible stacking, allowing the aperture size to be scaled simply by adjusting the number of layers, which in turn scales the antenna gain. These modifications also lead to improved antenna characteristics, including gain and radiation pattern. The measured reflection coefficient remains below −18 dB across the entire D-band (110–170 GHz). The sidelobe is less than −10 dB and cross-polarization discrimination is lower than −30 dB. The gain is measured to be 19.8 $\pm$ 1.7 dB.
- Open Access
- 3 February 2026
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Journal of Solid-State Circuits
- Vol. 61 (4) , 1294-1307
A 52 Gb/s 8.9-dBm EIRP 300-GHz-Band Amplifier-Last Outphasing Transmitter With Path Mismatch Calibration in 65-nm CMOS
This article presents a 300-GHz-band amplifier-last outphasing phased-array transmitter with path mismatch calibration in a 65-nm CMOS technology. Calibration is essential for mitigating impairments in outphasing systems used for wideband communication. The transmitter integrates two independent sub-THz LO generation chains to calibrate the phase mismatch between two paths and configure the phase delay between different phased-array elements. An integrated RF outphasing amplifier calibrates the amplitude mismatch and improves the transmitter’s effective isotropic radiated power (EIRP). After calibration, the transmitter exhibits a 3.3-dB improvement in error vector magnitude and supports 16 QAM modulation at 52 Gb/s over a distance of 9 cm. It achieves a peak EIRP of 8.9 dBm at 246 GHz, with a minimum EIRP of 5.0 dBm across the frequency range from 237 to 250 GHz. An 8×1 phased-array transmitter is implemented, demonstrating a main lobe scanning range of ±12° in the $E$ -plane.
- 3 February 2026
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Journal of Solid-State Circuits
- Vol. 61 (4) , 1294-1307
Open AccessA 52 Gb/s 8.9-dBm EIRP 300-GHz-Band Amplifier-Last Outphasing Transmitter With Path Mismatch Calibration in 65-nm CMOS
This article presents a 300-GHz-band amplifier-last outphasing phased-array transmitter with path mismatch calibration in a 65-nm CMOS technology. Calibration is essential for mitigating impairments in outphasing systems used for wideband communication. The transmitter integrates two independent sub-THz LO generation chains to calibrate the phase mismatch between two paths and configure the phase delay between different phased-array elements. An integrated RF outphasing amplifier calibrates the amplitude mismatch and improves the transmitter’s effective isotropic radiated power (EIRP). After calibration, the transmitter exhibits a 3.3-dB improvement in error vector magnitude and supports 16 QAM modulation at 52 Gb/s over a distance of 9 cm. It achieves a peak EIRP of 8.9 dBm at 246 GHz, with a minimum EIRP of 5.0 dBm across the frequency range from 237 to 250 GHz. An 8×1 phased-array transmitter is implemented, demonstrating a main lobe scanning range of ±12° in the $E$ -plane.
- Open Access
- 1 January 2026
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Journal of Solid-State Circuits
- Vol. 61 (8) , 1-18
A 300-GHz-Band 16.2-dBm EIRP Four-Element Amplifier-Last Phased-Array Transmitter With On-Chip Vivaldi Antenna in 65-nm CMOS
- 1 January 2026
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Journal of Solid-State Circuits
- Vol. 61 (8) , 1-18
Open AccessA 300-GHz-Band 16.2-dBm EIRP Four-Element Amplifier-Last Phased-Array Transmitter With On-Chip Vivaldi Antenna in 65-nm CMOS
- 27 October 2025
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Microwave Theory and Techniques
- Vol. 74 (1) , 547-559
Co-Design of Thermal and RF Performance in a Stacked Sub-THz Antenna-in-Package With Embedded Endfire Arrays
Sub-terahertz (Sub-THz) communication systems are a promising technology for next-generation high-speed, high-capacity wireless networks. Achieving this requires highly integrated antenna-in-package (AiP) solutions combining antennas and radio frequency integrated circuits (RFICs). However, high-frequency operation and dense integration increase RFIC heat density, potentially degrading AiP performance and reliability. This article proposes a sub-THz AiP with both excellent RF and thermal performance. The design features a multilayer antenna structure on a low-loss dielectric substrate, minimizing RFIC-to-antenna connections and radiating toward the substrate edge. A dual-sided heat dissipation structure is also introduced for efficient thermal management in stacked configurations. Validation through simulations and measurements confirmed good reflection characteristics ( $\vert $ S $11\vert \lt $ –10 dB), 15 dBi gain, and thermal resistance below 4.1 K/W. 2-D beam steering was also demonstrated, highlighting the effectiveness of the proposed co-design approach.
- 27 October 2025
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Microwave Theory and Techniques
- Vol. 74 (1) , 547-559
Co-Design of Thermal and RF Performance in a Stacked Sub-THz Antenna-in-Package With Embedded Endfire Arrays
Sub-terahertz (Sub-THz) communication systems are a promising technology for next-generation high-speed, high-capacity wireless networks. Achieving this requires highly integrated antenna-in-package (AiP) solutions combining antennas and radio frequency integrated circuits (RFICs). However, high-frequency operation and dense integration increase RFIC heat density, potentially degrading AiP performance and reliability. This article proposes a sub-THz AiP with both excellent RF and thermal performance. The design features a multilayer antenna structure on a low-loss dielectric substrate, minimizing RFIC-to-antenna connections and radiating toward the substrate edge. A dual-sided heat dissipation structure is also introduced for efficient thermal management in stacked configurations. Validation through simulations and measurements confirmed good reflection characteristics ( $\vert $ S $11\vert \lt $ –10 dB), 15 dBi gain, and thermal resistance below 4.1 K/W. 2-D beam steering was also demonstrated, highlighting the effectiveness of the proposed co-design approach.
- 11 August 2025
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Solid-State Circuits Letters
- Vol. 8, 241-244
A 160-Gb/s D-Band Bi-Directional CMOS Mixer Covering 112–170 GHz for 6G Transceivers
This work presents a D-band bi-directional CMOS double-balanced mixer (DBM) supporting data rates over 160 Gb/s with a 58-GHz RF bandwidth (112–170 GHz). The mixer employs four identical NMOS passive switches ($12~\mu $ m/60 nm) in a DBM topology, providing the isolation between RF, LO, and IF ports. Both IF and RF are bi-directional, enabling up conversion and down conversion. The proposed mixer is fabricated in a 65-nm CMOS process with an integrated LO-driver amplifier. LO amplifier has a 9.5-dB simulated gain and an 8-dBm saturated output power. The total area, including RF and DC pads is 0.7749 mm2. The measurement result shows a −12.5-dB conversion gain in both directions with differential signals and a 3-dB extra loss in a single-ended configuration.$\mathrm { OP_{1dB}}$ is −13.5 dBm for up conversion and −5.5 dBm for down conversion. In modulated signal measurements, the mixer handles a 40-GHz bandwidth OFDM 16-QAM signal centered at 135 GHz, demonstrating a 160-Gb/s data rate in both up conversion and down conversion.- 11 August 2025
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Solid-State Circuits Letters
- Vol. 8, 241-244
A 160-Gb/s D-Band Bi-Directional CMOS Mixer Covering 112–170 GHz for 6G Transceivers
This work presents a D-band bi-directional CMOS double-balanced mixer (DBM) supporting data rates over 160 Gb/s with a 58-GHz RF bandwidth (112–170 GHz). The mixer employs four identical NMOS passive switches ($12~\mu $ m/60 nm) in a DBM topology, providing the isolation between RF, LO, and IF ports. Both IF and RF are bi-directional, enabling up conversion and down conversion. The proposed mixer is fabricated in a 65-nm CMOS process with an integrated LO-driver amplifier. LO amplifier has a 9.5-dB simulated gain and an 8-dBm saturated output power. The total area, including RF and DC pads is 0.7749 mm2. The measurement result shows a −12.5-dB conversion gain in both directions with differential signals and a 3-dB extra loss in a single-ended configuration.$\mathrm { OP_{1dB}}$ is −13.5 dBm for up conversion and −5.5 dBm for down conversion. In modulated signal measurements, the mixer handles a 40-GHz bandwidth OFDM 16-QAM signal centered at 135 GHz, demonstrating a 160-Gb/s data rate in both up conversion and down conversion.- Open Access
- 18 June 2025
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Journal of Solid-State Circuits
- Vol. 60 (10) , 3566-3576
A Compact D-Band Phase Shifter With 0.1-Degree Phase Resolution and Ultra-Low Phase Error in 65-nm CMOS
This article introduces a compact D-band phase shifter, which achieves high-resolution phase steps and ultra-low phase error, designed for the sixth-generation (6G) mobile network. The proposed design integrates two novel circuit architectures: a feedback fine-tuning phase shifter (FFPS) provides precise phase control with fine 0.1° steps over a 22.5° range by using a feedback transmission line (TL) to enhance gain and tuning range. The second architecture is a two-mode non-uniform propagation delay phase shifter (2-mode NU-PDPS), which enables coarse phase tuning with 22.5° steps, covering a full 360° phase range. It employs non-uniform MOSFET sizing to realize ideal TL operation. In addition, two modes are introduced in the quarter-wave TL to increase phase resolution without increasing area and thus achieves a core area of 0.06 $\text {mm}^{2}$ . The proposed phase shifter operates with 0.1° steps over a 360° fine-tuning range within the frequency range of 150–160 GHz. It achieves an rms phase error of 0.68°, the lowest among reported phase shifters in this frequency range. The total power consumption is 5mW at 1.0-V VDD, with an insertion loss of −2.5dB.
- 18 June 2025
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Journal of Solid-State Circuits
- Vol. 60 (10) , 3566-3576
Open AccessA Compact D-Band Phase Shifter With 0.1-Degree Phase Resolution and Ultra-Low Phase Error in 65-nm CMOS
This article introduces a compact D-band phase shifter, which achieves high-resolution phase steps and ultra-low phase error, designed for the sixth-generation (6G) mobile network. The proposed design integrates two novel circuit architectures: a feedback fine-tuning phase shifter (FFPS) provides precise phase control with fine 0.1° steps over a 22.5° range by using a feedback transmission line (TL) to enhance gain and tuning range. The second architecture is a two-mode non-uniform propagation delay phase shifter (2-mode NU-PDPS), which enables coarse phase tuning with 22.5° steps, covering a full 360° phase range. It employs non-uniform MOSFET sizing to realize ideal TL operation. In addition, two modes are introduced in the quarter-wave TL to increase phase resolution without increasing area and thus achieves a core area of 0.06 $\text {mm}^{2}$ . The proposed phase shifter operates with 0.1° steps over a 360° fine-tuning range within the frequency range of 150–160 GHz. It achieves an rms phase error of 0.68°, the lowest among reported phase shifters in this frequency range. The total power consumption is 5mW at 1.0-V VDD, with an insertion loss of −2.5dB.
- Open Access
- 4 June 2025
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Microwave and Wireless Technology Letters
- Vol. 35 (6) , 920-923
150 GHz-Band Compact Phased-Array AiP Module for XR Applications Toward 6G
To realize the practical application of sub-THz band wireless communication toward 6G, it is necessary to develop AiP modules with compact size and low cost. This letter discusses the design of a miniaturized AiP module for high-speed wireless communication targeting extended reality (XR) applications in medical operating rooms as an example of 6G use cases. By integrating waveguide antenna array along with a compact divider/combiner within the multilayer substrates, the module achieves a small form factor of $8.42\times 20.0\times 1.37$ mm while integrating radio frequency integrated circuit (RFIC) and peripheral surface mount components. The measurement shows a data rate of 40 Gb/s at a 3 m distance in the 150 GHz band with an excellent transmission energy efficiency of 35.7 pJ/bit.
- 4 June 2025
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Microwave and Wireless Technology Letters
- Vol. 35 (6) , 920-923
Open Access150 GHz-Band Compact Phased-Array AiP Module for XR Applications Toward 6G
To realize the practical application of sub-THz band wireless communication toward 6G, it is necessary to develop AiP modules with compact size and low cost. This letter discusses the design of a miniaturized AiP module for high-speed wireless communication targeting extended reality (XR) applications in medical operating rooms as an example of 6G use cases. By integrating waveguide antenna array along with a compact divider/combiner within the multilayer substrates, the module achieves a small form factor of $8.42\times 20.0\times 1.37$ mm while integrating radio frequency integrated circuit (RFIC) and peripheral surface mount components. The measurement shows a data rate of 40 Gb/s at a 3 m distance in the 150 GHz band with an excellent transmission energy efficiency of 35.7 pJ/bit.
- Open Access
- 20 January 2025
- Published by Association for Computing Machinery (ACM)
- p. 354-355
A D-Band CMOS Transceiver Chipset Supporting 640Gb/s Date Rate with 4?4 Line-of-Sight MIMO
A D-band (114--170GHz) CMOS transceiver (TRX) chipset covering a 56GHz signal-chain bandwidth with a 640-Gb/s data rate is proposed in this work. The design includes an 8-way low-Q power-combined power amplifier (PA), a 2-way low-Q power-combined low noise amplifier (LNA), wideband-impedance-transformation mixers, and common-source-based cascaded distributed amplifiers (DA) to improve bandwidth and linearity. The proposed TRX chipset achieves a 200Gb/s SISO data rate and a 640Gb/s MIMO data rate.
- 20 January 2025
- Published by Association for Computing Machinery (ACM)
- p. 354-355
Open AccessA D-Band CMOS Transceiver Chipset Supporting 640Gb/s Date Rate with 4?4 Line-of-Sight MIMO
A D-band (114--170GHz) CMOS transceiver (TRX) chipset covering a 56GHz signal-chain bandwidth with a 640-Gb/s data rate is proposed in this work. The design includes an 8-way low-Q power-combined power amplifier (PA), a 2-way low-Q power-combined low noise amplifier (LNA), wideband-impedance-transformation mixers, and common-source-based cascaded distributed amplifiers (DA) to improve bandwidth and linearity. The proposed TRX chipset achieves a 200Gb/s SISO data rate and a 640Gb/s MIMO data rate.