Yingchun Fu
Research Subjects
Research Interests
Yingchun Fu has a total of 7 co-authors. Here are the top co-authors by number of shared publications:
- Chaowei Si
Engineering Research Center for Semiconductor Integrated Technology, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, China
1 shared publication - Fuhua Yang
Engineering Research Center for Semiconductor Integrated Technology, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, China
1 shared publication - Guowei Han
Engineering Research Center for Semiconductor Integrated Technology, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
1 shared publication - Jiebin Gu
State Key Laboratory of Transducer Technology, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai, China
1 shared publication - Jin Ning
Engineering Research Center for Semiconductor Integrated Technology, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
1 shared publication - Yongmei Zhao
Engineering Research Center for Semiconductor Integrated Technology, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
1 shared publication
Latest Publications
- Open Access
- 5 July 2022
- Published by MDPI AG in Micromachines
- Vol. 13 (7) , 1071
A High-Performance MEMS Accelerometer with an Improved TGV Process of Low Cost
High-performance MEMS accelerometers usually use a pendulum structure with a larger mass. Although the performance of the device is guaranteed, the manufacturing cost is high. This paper proposes a method of fabricating high-performance MEMS accelerometers with a TGV process, which can reduce the manufacturing cost and ensure the low-noise characteristics of the device. The TGV processing relies on laser drilling, the metal filling in the hole is based on the casting mold and CMP, and the packaging adopts the three-layer anodic bonding process. Moreover, for the first time, the casting mold process is introduced to the preparation of MEMS devices. In terms of structural design, the stopper uses distributed comb electrodes for overload displacement suppression, and the gas released by the packaging method provides excellent mechanical damping characteristics. The prepared accelerometer has an anti-overload capability of 10,000 g, the noise density is less than 0.001°/√Hz, and it has ultra-high performance in tilt measurement.
- 5 July 2022
- Published by MDPI AG in Micromachines
- Vol. 13 (7) , 1071
Open AccessA High-Performance MEMS Accelerometer with an Improved TGV Process of Low Cost
High-performance MEMS accelerometers usually use a pendulum structure with a larger mass. Although the performance of the device is guaranteed, the manufacturing cost is high. This paper proposes a method of fabricating high-performance MEMS accelerometers with a TGV process, which can reduce the manufacturing cost and ensure the low-noise characteristics of the device. The TGV processing relies on laser drilling, the metal filling in the hole is based on the casting mold and CMP, and the packaging adopts the three-layer anodic bonding process. Moreover, for the first time, the casting mold process is introduced to the preparation of MEMS devices. In terms of structural design, the stopper uses distributed comb electrodes for overload displacement suppression, and the gas released by the packaging method provides excellent mechanical damping characteristics. The prepared accelerometer has an anti-overload capability of 10,000 g, the noise density is less than 0.001°/√Hz, and it has ultra-high performance in tilt measurement.