Florian Rigaud-Minet
Current Organizations / Institutes
The organizations/institutes from the scholar's latest article
Previous Organizations / Institutes
The organizations / institutes from the scholar's other articles in the past ten years
Research Subjects
Research Interests
Florian Rigaud-Minet has a total of 12 co-authors. Here are the top co-authors by number of shared publications:
- Charlotte Gillot
Univ. Grenoble Alpes, CEA, LETI, F-38000 Grenoble, France
2 shared publications - Dominique Planson
Université Claude Bernard Lyon 1
2 shared publications - Hervé Morel
INSA Lyon, Ecole Centrale de Lyon, CNRS, Ampre, UMR5005, Universit Claude Bernard Lyon 1, Villeurbanne, France
2 shared publications - Julien Buckley
CEA Leti, Univ. Grenoble Alpes , F 38000 Grenoble
2 shared publications - Matthew Charles
CEA Leti, Univ. Grenoble Alpes , F 38000 Grenoble
2 shared publications - Romain Gwoziecki
Univ. Grenoble Alpes, CEA, LETI, F-38000 Grenoble, France
2 shared publications
Latest Publications
- Open Access
Deep Level Transient Fourier Spectroscopy Investigation of Electron Traps on AlGaN/GaN-on-Si Power Diodes
Many kinds of defects are present in AlGaN/GaN-on-Si based power electronics devices. Their identification is the first step to understand and improve device performance. Electron traps are investigated in AlGaN/GaN-on-Si power diodes using deep level transient Fourier spectroscopy (DLTFS) at different bias conditions for two Schottky contact’s etching recipes. This study reveals seven different traps corresponding to point defects. Their energy level ET ranged from 0.4 eV to 0.57 eV below the conduction band. Among them, two new traps are reported and are etching-related: D3 (ET = 0.47–0.48 eV; σ ≈ 10−15 cm2) and D7 (ET = 0.57 eV; σ = 4.45 × 10−12 cm2). The possible origin of the other traps are discussed with respect to the GaN literature. They are proposed to be related to carbon and nitrogen vacancies or to carbon, such as CN-CGa. Some others are likely due to crystal surface recombination, native defects or a related complex, or to the nitrogen antisite: NGa.
Open AccessDeep Level Transient Fourier Spectroscopy Investigation of Electron Traps on AlGaN/GaN-on-Si Power Diodes
Many kinds of defects are present in AlGaN/GaN-on-Si based power electronics devices. Their identification is the first step to understand and improve device performance. Electron traps are investigated in AlGaN/GaN-on-Si power diodes using deep level transient Fourier spectroscopy (DLTFS) at different bias conditions for two Schottky contact’s etching recipes. This study reveals seven different traps corresponding to point defects. Their energy level ET ranged from 0.4 eV to 0.57 eV below the conduction band. Among them, two new traps are reported and are etching-related: D3 (ET = 0.47–0.48 eV; σ ≈ 10−15 cm2) and D7 (ET = 0.57 eV; σ = 4.45 × 10−12 cm2). The possible origin of the other traps are discussed with respect to the GaN literature. They are proposed to be related to carbon and nitrogen vacancies or to carbon, such as CN-CGa. Some others are likely due to crystal surface recombination, native defects or a related complex, or to the nitrogen antisite: NGa.
- Open Access
Capacitance Temperature Dependence Analysis of GaN-on-Si Power Transistors
Many kinds of defects are present in the different layers of GaN-on-Si epitaxy. Their study is very important, especially because they play a significant role on the device characteristics. This paper investigates the cause of the temperature dependence of the output and Miller capacitance at three temperatures: 25 °C, 75 °C and 150 °C of GaN-on-Si power transistors. In particular, this study focuses on the temperature dependence of the depletion voltage seen in these characteristics due to the progressive depletion of the two-dimensional electron gas (2DEG) under the device field plates. First, variations of the epitaxial growth are studied, showing that the intrinsic carbon concentration does not play a significant role. Secondly, the deep acceptor trap origin of the temperature dependence is analyzed with a TCAD simulation study. Thirdly, by adjusting TCAD parameters and binding them with experimental concentrations to fit experimental data, trap properties were obtained. The comparison of these properties with the acceptor traps in the literature suggests that the origin is a gallium vacancy tied to oxygen atom(s) on the N site.
Open AccessCapacitance Temperature Dependence Analysis of GaN-on-Si Power Transistors
Many kinds of defects are present in the different layers of GaN-on-Si epitaxy. Their study is very important, especially because they play a significant role on the device characteristics. This paper investigates the cause of the temperature dependence of the output and Miller capacitance at three temperatures: 25 °C, 75 °C and 150 °C of GaN-on-Si power transistors. In particular, this study focuses on the temperature dependence of the depletion voltage seen in these characteristics due to the progressive depletion of the two-dimensional electron gas (2DEG) under the device field plates. First, variations of the epitaxial growth are studied, showing that the intrinsic carbon concentration does not play a significant role. Secondly, the deep acceptor trap origin of the temperature dependence is analyzed with a TCAD simulation study. Thirdly, by adjusting TCAD parameters and binding them with experimental concentrations to fit experimental data, trap properties were obtained. The comparison of these properties with the acceptor traps in the literature suggests that the origin is a gallium vacancy tied to oxygen atom(s) on the N site.