Antoine Guipet
Current Organizations / Institutes
The organizations/institutes from the scholar's latest article
Research Subjects
Antoine Guipet has a total of 6 co-authors. Here are the top co-authors by number of shared publications:
- Alessandro Scarfato
Department of Quantum Matter Physics, University of Geneva, 24, Quai Ernest-Ansermet, 1211 Geneva 4, Switzerland
2 shared publications - Jose Martinez-Castro
Peter Grünberg Institute (PGI‐3), Forschungszentrum Jülich 52425 Jülich Germany
2 shared publications Christoph Renner
1 shared publication- Christoph Renner
University of Geneva
1 shared publication Vincent Pasquier
1 shared publication- Vincent Pasquier
University of Geneva
1 shared publication
Latest Publications
- Open Access
- 1 January 2023
- Published by AIP Publishing in Review of Scientific Instruments
- Vol. 94 (1) , 013905
Tunable biaxial strain device for low-dimensional materials
Strain is attracting much interest as a mean to tune the properties of thin exfoliated two-dimensional materials and their heterostructures. Numerous devices to apply tunable uniaxial strain are proposed in the literature, but only few for biaxial strain, often with a trade-off between maximum strain and uniformity, reversibility, and device size. We present a compact device that allows for the controlled application of uniform in-plane biaxial strain, with maximum deformation and uniformity comparable to those found in much larger devices. Its performance and strain uniformity over the sample area are modeled using finite element analysis and demonstrated by measuring the response of exfoliated 2H–MoS2 to strain by Raman spectroscopy.
- 1 January 2023
- Published by AIP Publishing in Review of Scientific Instruments
- Vol. 94 (1) , 013905
Open AccessTunable biaxial strain device for low-dimensional materials
Strain is attracting much interest as a mean to tune the properties of thin exfoliated two-dimensional materials and their heterostructures. Numerous devices to apply tunable uniaxial strain are proposed in the literature, but only few for biaxial strain, often with a trade-off between maximum strain and uniformity, reversibility, and device size. We present a compact device that allows for the controlled application of uniform in-plane biaxial strain, with maximum deformation and uniformity comparable to those found in much larger devices. Its performance and strain uniformity over the sample area are modeled using finite element analysis and demonstrated by measuring the response of exfoliated 2H–MoS2 to strain by Raman spectroscopy.
- Open Access
Tunable biaxial strain device for low dimensional materials
Strain is attracting much interest as a mean to tune the properties of thin exfoliated two-dimensional materials and their heterostructures. Numerous devices to apply tunable uniaxial strain are proposed in the literature, but only few for biaxial strain where there is often a trade-off between maximum strain and uniformity, reversibility and device size. We present a compact device that allows the controlled application of uniform in-plane biaxial strain, with maximum deformation and uniformity comparable to those found in much larger devices. Its performance and strain uniformity over the sample area are modeled using finite element analysis and demonstrated by measuring the response of exfoliated 2H-MoS$_2$ to strain by Raman spectroscopy.
Open AccessTunable biaxial strain device for low dimensional materials
Strain is attracting much interest as a mean to tune the properties of thin exfoliated two-dimensional materials and their heterostructures. Numerous devices to apply tunable uniaxial strain are proposed in the literature, but only few for biaxial strain where there is often a trade-off between maximum strain and uniformity, reversibility and device size. We present a compact device that allows the controlled application of uniform in-plane biaxial strain, with maximum deformation and uniformity comparable to those found in much larger devices. Its performance and strain uniformity over the sample area are modeled using finite element analysis and demonstrated by measuring the response of exfoliated 2H-MoS$_2$ to strain by Raman spectroscopy.