Moriyoshi Haruyama

A platform for heteroepitaxial (111) chemical vapor deposition (CVD) diamond quantum sensors with preferentially aligned nitrogen vacancy (NV) centers on a large substrate is developed, and its operation as an electric vehicle (EV) battery monitor is demonstrated. A self‐standing heteroepitaxial CVD diamond film with a (111) orientation and a thickness of 150 µm is grown on a non‐diamond substrate and subsequently separated from it. The high uniformity and crystallinity of the (111)‐oriented diamond is confirmed. A 150‐µm thick NV‐diamond layer is then deposited on the heteroepitaxial diamond. The T ₂ value measured by confocal microscopy is 20 µs, which corresponds to substitutional nitrogen defect concentration of 8 ppm. The nitrogen‐vacancy concentration and T ₂ ^* are estimated to be 0.05 ppm and 0.05 µs by continuous wave optically detected magnetic resonance (CW‐ODMR) spectroscopy in a fiber‐top sensor configuration. In a gradiometer, where two sensors are placed on both sides of the busbar, the noise floor is 17 nT/Hz ^0.5 in the frequency range of 10–40 Hz without magnetic shielding. The Allan deviation of the magnetic field noise in the laboratory is below 0.3 µT, which corresponds to a busbar current of 10 mA, in the accumulation time range of 10 ms to 100 s.

We studied the charge-state stabilization of shallow nitrogen-vacancy (NV) centers in (111) diamond using graphene/diamond junctions. Measurement of the fluorescence stability and evaluation of the charge-state stability were conducted on the NV centers at the graphene and the graphene-free region. The results revealed that about half of the total NV centers (NV⁰ + NV⁻) at the graphene-free region were unstable, while over 90% of the measured NV centers at the graphene region were stabilized as NV⁻ centers. Graphene/diamond junctions contribute significantly to charge-state stabilization of shallow NV⁻ centers in (111) diamond.

The realization of electroluminescence (EL) of negatively charged nitrogen vacancy (NV⁻) centers is important toward all-electrical control of diamond quantum devices. In this study, we demonstrated electrical excitation and detection of EL of single NV⁻ centers by using lateral diamond p⁺–i(n⁻)–n⁺ diodes. It had been grown by homoepitaxy using the plasma enhanced chemical vapor deposition technique. We introduced a lightly phosphorus doped i(n⁻) layer to stabilize the negative state of NV centers. It was estimated that the efficiency of the electrical excitation rate of the NV center was more than 30 times enhanced by introducing lateral diamond p⁺–i(n⁻)–n⁺ diodes structure compared with the previous vertical diode. Furthermore, the EL of a single NV⁻ center embedded in the i(n⁻) layer region was characterized. The results show that the charge state of the single NV centers can be manipulated by the voltage applied to the p⁺–i(n⁻)–n⁺ diode, where the emission of EL is increasingly dominated by NV⁻ in the range of 30 to 50 V.