Hongyuan Yuan
Research Subjects
Hongyuan Yuan has a total of 12 co-authors. Here are the top co-authors by number of shared publications:
Daniel C. Riley
1 shared publication- Eric Pop
Stanford University
1 shared publication - Haotian Wang
Rice University
1 shared publication Igor Bargatin
Department of Mechanical Engineering and Applied Mechanics, University of Pennsylvania , Philadelphia, Pennsylvania 19104, United States
1 shared publicationJ. Provine
1 shared publicationJared W. Schwede
1 shared publication
Latest Publications
- 29 September 2015
- Published by American Chemical Society (ACS) in Nano Letters
- Vol. 15 (10) , 6475-6480
Engineering Ultra-Low Work Function of Graphene
Low work function materials are critical for energy conversion and electron emission applications. Here, we demonstrate for the first time that an ultralow work function graphene is achieved by combining electrostatic gating with a Cs/O surface coating. A simple device is built from large-area monolayer graphene grown by chemical vapor deposition, transferred onto 20 nm HfO2 on Si, enabling high electric fields capacitive charge accumulation in the graphene. We first observed over 0.7 eV work function change due to electrostatic gating as measured by scanning Kelvin probe force microscopy and confirmed by conductivity measurements. The deposition of Cs/O further reduced the work function, as measured by photoemission in an ultrahigh vacuum environment, which reaches nearly 1 eV, the lowest reported to date for a conductive, nondiamond material.
- 29 September 2015
- Published by American Chemical Society (ACS) in Nano Letters
- Vol. 15 (10) , 6475-6480
Engineering Ultra-Low Work Function of Graphene
Low work function materials are critical for energy conversion and electron emission applications. Here, we demonstrate for the first time that an ultralow work function graphene is achieved by combining electrostatic gating with a Cs/O surface coating. A simple device is built from large-area monolayer graphene grown by chemical vapor deposition, transferred onto 20 nm HfO2 on Si, enabling high electric fields capacitive charge accumulation in the graphene. We first observed over 0.7 eV work function change due to electrostatic gating as measured by scanning Kelvin probe force microscopy and confirmed by conductivity measurements. The deposition of Cs/O further reduced the work function, as measured by photoemission in an ultrahigh vacuum environment, which reaches nearly 1 eV, the lowest reported to date for a conductive, nondiamond material.