Lucas L. Enright
Current Organizations / Institutes
The organizations/institutes from the scholar's latest article
Previous Organizations / Institutes
The organizations / institutes from the scholar's other articles in the past ten years
Lucas L. Enright has a total of 34 co-authors. Here are the top co-authors by number of shared publications:
- Nathan D. Orloff
RF Technology Division, National Institute of Standards and Technology 2 , 325 Broadway, Boulder, Colorado 80305
2 shared publications - Nicholas R. Jungwirth
RF Technology Division, National Institute of Standards and Technology 2 , 325 Broadway, Boulder, Colorado 80305
2 shared publications - Angela C. Stelson
RF Technology Division, National Institute of Standards and Technology 2 , 325 Broadway, Boulder, Colorado 80305
1 shared publication - Anna Osella
National Institute of Standardsand Technology, Boulder, CO, USA
1 shared publication - Bartlomiej Salski
Warsaw University of Technology
1 shared publication - Benjamin F. Jamroz
National Institute of Standards and Technology, Boulder, CO, USA
1 shared publication
Latest Publications
- 1 January 2026
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Instrumentation and Measurement
- Vol. 75, 6005315
Benchmarking Complex Permittivity Measurements
- 1 January 2026
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Instrumentation and Measurement
- Vol. 75, 6005315
Benchmarking Complex Permittivity Measurements
- Open Access
- 14 August 2023
- Published by AIP Publishing in Applied Physics Letters
- Vol. 123 (7)
Measuring the anisotropic permittivity tensor of DyScO3 to 110 GHz
DyScO3 (DSO) is an attractive substrate on which to grow epitaxial thin films with extraordinary materials physics. However, its highly anisotropic permittivity makes some measurements exceedingly difficult: For instance, its permittivity tensor has not yet been fully characterized at millimeter-wave frequencies. While there are methods to characterize anisotropic permittivity at millimeter-wave frequencies, there are very few methods those are suitable for the small lateral dimensions that DyScO3 can be grown in. To overcome this lack in the material characterization, we tested an on-wafer method based on coplanar waveguides to measure the full anisotropic permittivity tensor from 0.1 to 110 GHz. We characterized two orthogonal sets of coplanar waveguides fabricated on each of two substrates with (001) and (110) crystallographic orientations to resolve the full permittivity tensor. To validate our measurements, we compared our results to data from dc parallel plate capacitors and THz time-domain spectroscopy. Our measurements fill the need for measurements of the permittivity of DyScO3, while the methodology, more generally, enables quantitative characterization of anisotropic dielectrics.
- 14 August 2023
- Published by AIP Publishing in Applied Physics Letters
- Vol. 123 (7)
Open AccessMeasuring the anisotropic permittivity tensor of DyScO3 to 110 GHz
DyScO3 (DSO) is an attractive substrate on which to grow epitaxial thin films with extraordinary materials physics. However, its highly anisotropic permittivity makes some measurements exceedingly difficult: For instance, its permittivity tensor has not yet been fully characterized at millimeter-wave frequencies. While there are methods to characterize anisotropic permittivity at millimeter-wave frequencies, there are very few methods those are suitable for the small lateral dimensions that DyScO3 can be grown in. To overcome this lack in the material characterization, we tested an on-wafer method based on coplanar waveguides to measure the full anisotropic permittivity tensor from 0.1 to 110 GHz. We characterized two orthogonal sets of coplanar waveguides fabricated on each of two substrates with (001) and (110) crystallographic orientations to resolve the full permittivity tensor. To validate our measurements, we compared our results to data from dc parallel plate capacitors and THz time-domain spectroscopy. Our measurements fill the need for measurements of the permittivity of DyScO3, while the methodology, more generally, enables quantitative characterization of anisotropic dielectrics.