Yousuf Mohammed

NbMoTaW refractory multi principal element alloy thin films were deposited using two separate sputtering paths: a single pre-alloyed equimolar composite target and individual Nb, Mo, Ta, and W elemental targets. While previous studies examined NbMoTaW films deposited from a pre-alloyed composite targets, the influence of deposition path on the microstructure and mechanical behavior remains insufficiently understood. In order to produce the same or similar equimolar compositions of the NbMoTaW films sputtered from the pre-alloyed composite target, the sputtering power has to be tuned for each individual target. The sputtering pressure was varied between 0.20 and 1.25 Pa. Both deposition paths produced near-equiatomic NbMoTaW films with stable BCC structure. FESEM, XRD and nanoindentation results showed similar pressure-dependent trends in grain size, crystallite size, dislocation density, lattice constant, microstrain, and hardness. The results indicate that sputtering pressure and film thickness dominate the microstructural and mechanical behavior, while deposition path mainly suggests processing flexibility. Overall, this study demonstrates when the elemental composition is properly maintained, both deposition paths can produce NbMoTaW films with comparable structural stability, microstructural characteristics, and mechanical properties. Pre-alloyed composite target sputtering offers simplicity and reproducibility, whereas individual target co-sputtering provides compositional flexibility and cost-effective alloy design capability.

High-energy physics research, industrial sterilizing, and material processing depend extensively on electron beam accelerators. Exit windows are crucial components of such electron accelerator systems, maintaining vacuum integrity inside the machine while providing mechanical strength, thermal stability, and radiation resistance at the beam-target interface. In this study, thin metallic films of Ni, Ti, Cr, and V were explored for use in electron beam exit windows, and their properties were compared with the properties of their bulk counterparts. Simulation results of metal foils predicted Ti to exhibit less beam power dissipation compared to Ni. However, Ni possesses superior mechanical and structural properties compared to Ti. The performance of these films under electron beam irradiation was examined by depositing thin layers of these films on silicon and metallic substrates using magnetron sputtering and exposing them to e-beam irradiation in a controlled setup. The deposited films were subjected to a dose of approximately 66 kGy at a beam energy of 10 MeV and characterized prior to and postexposure to the beam using field emission scanning electron microscopy, atomic force microscopy, x-ray diffraction (XRD), and nanoindentation. Particular emphasis was given to characteristics like the grain structure, surface morphology, dislocation density, and hardness. XRD patterns revealed irradiation-induced changes in peak intensities, while the crystallinity remained largely unchanged. Nanoindentation results showed that the pristine and irradiated Ti and Ni films were twice as hard when compared to bulk Ti and Ni samples, regardless of the substrate type used (Si or bulk Ti, or Ni). These results emphasize the superior mechanical properties of thin metal films compared to their bulk counterparts. This study advances the optimization of thin film materials for robust and efficient e-beam applications, ensuring improved durability and operational reliability.

Beam exit windows are crucial components of any particle accelerator as they provide an interface between the beamline vacuum and target material at atmospheric media. For high beam power machines, special materials and designs are required to withstand high radiation and mechanical loads, while minimizing energy loss during transition and maximizing window lifetime. This research investigates the impact of electron beam exposure to bulk CrMnV and CrMnTiV high entropy alloys (HEAs) with the primary goal of identifying suitable candidate materials for the design of robust and durable exit window settings. The selection criteria include intrinsic characteristics, power dissipation, and mechanical responses. According to the thermodynamic calculations, both equiatomic CrMnV and the addition of 7% of Ti with equiatomic CrMnV yield solid-solutions phases. The structural and mechanical properties of CrMnV and CrMnTiV samples were tested using field emission scanning electron microscopy, atomic force microscopy, scanning electron microcopy with energy dispersive x-ray spectroscopy, x-ray diffraction, and nanoindentation before and after exposure to a dose of ∼66 kGy from a 10 MeV e-beam accelerator. Despite exhibiting beam transmission characteristics comparable to Cr and V, the indentation hardness of HEAs exceeded that of the Cr and V samples by five to six times. The examination of the CrMnTiV irradiated samples revealed organized deformation patterns depicting new features, which we suspect twinning and twin boundaries due to the addition of Ti to CrMnV. Ti, a hexagonal-close-packed crystal structure, is commonly known for deformation twinning behavior.

This paper investigates the surface morphology, mechanical properties, and electrical resistivity of 96.5Sn–3.0Ag–0.5Cu (SAC305) thin films deposited on Si and SiO2 substrates through RF magnetron sputtering. Various deposition parameters were tested using both DC and RF power sources at different pressures and powers to produce robust continuous films. The most optimal surface morphology, with an average grain size of ∼1 μm and a thickness of ∼2.2 μm, was accomplished at a pressure of 2.4 mTorr and 200 W power. After polishing, a uniform thickness of 1800 nm with a mean roughness (Ra) of 14.9 nm was obtained. The samples contained polycrystalline β-Sn grains at (200) diffraction planes with a preferred orientation 2θ of 30.70°. Although the XRD pattern did not indicate any Ag peaks, weak peaks of Ag3Sn were observed at 2θ of 37.60° and 39.59°, corresponding to diffraction planes (020) and (211), respectively. The electrical resistivity of the SAC305 thin film deposited on the SiO2 substrate and of the bulk SAC305 samples were measured as 19.6 and 13.7 μΩ cm, respectively. It was noted that changes in hold time at peak loads or the rate of loading in the creep experiments did not significantly influence the creep properties of the SAC305 bulk or thin film material.