CFChen Fu

Chen Fu

Shandong Jiaotong University
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Chen Fu has a total of 24 co-authors. Here are the top co-authors by number of shared publications:

Latest Publications

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    The Influence of Gap Angle on the Transport Characteristics of Split-Gate AlGaN/GaN Heterostructure Field-Effect Transistors

    by Ying Kang, Xiaojia Zhang, Guangyuan Jiang, Chen Fu, Zhenfei Hou, Guangyuan Zhang, Caina Luan, Yang Liu

    In this work, split-gate (SG) AlGaN/GaN heterostructure field-effect transistors (HFETs) with different gap angles were fabricated. The effect of the gap angle on the transport characteristics of these SG devices was investigated via measurement and analysis of their direct-current electrical properties. The results show that varying the gap angle significantly influences the channel current and further modulates the turn-off voltage of the devices. Theoretical analysis indicated that a change in gap angle directly alters the length of the gap region and affects the conduction channel effective width (Weff) through geometric effects, thereby modifying the channel current. In addition, the gap angle affects the total amount and distribution of additional polarization charges underneath the gate, which influences the polarization Coulomb field (PCF) scattering intensity and thus modulates the electron mobility of the devices. These findings provide a new direction for the structural optimization of SG AlGaN/GaN HFETs and offer a valuable reference for further improving the performance of SG devices.

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    A novel method to determine the conduction channel effective width of split-gate AlGaN/GaN high electron mobility transistors

    by Yang Liu, Ying Kang, Guangyuan Jiang, Chen Fu, Guangyuan Zhang, Guang Yang, Caina Luan, Ming Yang

    In this study, split-gate AlGaN/GaN high electron mobility transistors (HEMTs) with a hollow-gate structure were designed. The measurement and analysis of the samples showed that the influence of polarization Coulomb field scattering could be greatly weakened without changing the conduction channel effective width (Weff) by using the hollow-gate structure. Therefore, a general experimental method for quantitatively determining Weff was obtained. In addition, the channel conduction status of the samples was studied, and the primary mechanism affecting the shape and size of the conduction channel was identified. During this process, the conduction channel shape that closely aligns with the experimental results was provided, and a theoretical method for approximately determining Weff was also obtained. This research has guiding value for the quantitative solution of transport-related parameters in split-gate AlGaN/GaN HEMTs.

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    Influence of the Bias Voltage on Effective Electron Velocity in AlGaN/GaN High Electron Mobility Transistors

    by Guangyuan Jiang, Peng Cui, Chen Fu, Yuanjie Lv, Ming Yang, Qianding Cheng, Yang Liu, Guangyuan Zhang

    The small-signal S parameters of the fabricated double-finger gate AlGaN/GaN high electron mobility transistors (HEMTs) were measured at various direct current quiescent operating points (DCQOPs). Under active bias conditions, small-signal equivalent circuit (SSEC) parameters such as Rs and Rd, and intrinsic parameters were extracted. Utilizing fT and the SSEC parameters, the effective electron velocity (νe−eff) and intrinsic electron velocity (νe−int) corresponding to each gate bias (VGS) were obtained. Under active bias conditions, the influence mechanism of VGS on νe−eff was systematically studied, and an expression was established that correlates νe−eff, νe−int, and bias-dependent parasitic resistances. Through the analysis of the main scattering mechanisms in AlGaN/GaN HEMTs, it has been discovered that the impact of VGS on νe−eff should be comprehensively analyzed from the aspects of νe−int and parasitic resistances. On the one hand, changes in VGS influence the intensity of polar optical phonon (POP) scattering and polarization Coulomb field (PCF) scattering, which lead to changes in νe−int dependent on VGS. The trend of νe−int with changes in VGS plays a dominant role in determining the trend of νe−eff with changes in VGS. On the other hand, both POP scattering and PCF scattering affect νe−eff through their impact on parasitic resistance. Since there is a difference in the additional scattering potential corresponding to the additional polarization charges (APC) between the gate-source/drain regions and the region under the gate, the mutual effects of PCF scattering on the under-gate electron system and the gate-source/drain electron system should be considered when adjusting the PCF scattering intensity through device structure optimization to improve linearity. This study contributes to a new understanding of the electron transport mechanisms in AlGaN/GaN HEMTs and provides a novel theoretical basis for improving device performance.

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    Polarized Coulomb field scattering in LaAlO3/SrTiO3 heterojunction field-effect transistors

    by Baocai Fan, Yichen Liu, Chen Fu, Zhaojun Lin, Sean Li

    LaAlO3/SrTiO3 heterojunction field-effect transistors (HFETs) were fabricated. Using a combination of measured current–voltage (I–V) output curves and gate-source capacitance–voltage (C–V) characteristic curves for the fabricated LaAlO3/SrTiO3 HFETs, and considering scattering mechanisms for longitudinal optical phonon, interface rough, electron-electron (E-E), acoustic phonon, and polarized Coulomb field (PCF), the channel electron mobility of LaAlO3/SrTiO3 HFETs has been calculated and analyzed. The results showed that PCF scattering is a significant carrier scattering mechanism in LaAlO3/SrTiO3 HFETs. The heterostructure of the LaAlO3/SrTiO3 system has strong polarization characteristics. This paper is the first to demonstrate that PCF scattering is a significant carrier scattering mechanism in LaAlO3/SrTiO3 HFETs, following GaN HFETs, thus demonstrating that LaAlO3/SrTiO3 HFETs also have PCF scattering effect.

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    Effect of device size on conduction channel effective width and polarization Coulomb field scattering intensity of split-gate AlGaN/GaN heterostructure field-effect transistors

    by Yang Liu, Chen Fu, Guangyuan Jiang, Guangyuan Zhang, Guang Yang, Yuanjie Lv, Zhaojun Lin

    In this study, the ungated AlGaN/GaN devices with special mesa structures were designed. The hypothesis of effective width expansion was tested experimentally by using ungated samples with different sizes, and an empirical expression for calculating the conduction channel effective width was given according to the experimental results. Finally, split-gate AlGaN/GaN heterostructure field-effect transistors (HFETs) with different gate lengths were prepared, and the channel electron mobility of split-gate samples was calculated by using the empirical expression and polarization Coulomb field (PCF) scattering theoretical model. The results showed that, for split-gate AlGaN/GaN HFETs, with the increase in the gate length, the total amount of additional polarization charges underneath the gate increases, resulting in the enhancement of the PCF scattering intensity.

    Cited by 2