GJGuangyuan Jiang

Guangyuan Jiang

Shandong Jiaotong University
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Guangyuan Jiang has a total of 18 co-authors. Here are the top co-authors by number of shared publications:

Latest Publications

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    The Influence of Gap Angle on the Transport Characteristics of Split-Gate AlGaN/GaN Heterostructure Field-Effect Transistors

    by Ying Kang, Xiaojia Zhang, Guangyuan Jiang, Chen Fu, Zhenfei Hou, Guangyuan Zhang, Caina Luan, Yang Liu

    In this work, split-gate (SG) AlGaN/GaN heterostructure field-effect transistors (HFETs) with different gap angles were fabricated. The effect of the gap angle on the transport characteristics of these SG devices was investigated via measurement and analysis of their direct-current electrical properties. The results show that varying the gap angle significantly influences the channel current and further modulates the turn-off voltage of the devices. Theoretical analysis indicated that a change in gap angle directly alters the length of the gap region and affects the conduction channel effective width (Weff) through geometric effects, thereby modifying the channel current. In addition, the gap angle affects the total amount and distribution of additional polarization charges underneath the gate, which influences the polarization Coulomb field (PCF) scattering intensity and thus modulates the electron mobility of the devices. These findings provide a new direction for the structural optimization of SG AlGaN/GaN HFETs and offer a valuable reference for further improving the performance of SG devices.

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    Influence of LPCVD-Si3N4 Thickness on Polarization Coulomb Field Scattering in AlGaN/GaN Metal–Insulator–Semiconductor High-Electron-Mobility Transistors

    by Guangyuan Jiang, Weikang Li, Xin Luo, Yang Liu, Chen Fu, Qingying Zhang, Guangyuan Zhang, Zhaojun Lin, Peng Cui

    The thickness of the LPCVD-Si3N4 gate dielectric layer significantly influences the electron transport properties of AlGaN/GaN metal–insulator–semiconductor high-electron-mobility transistors (MIS-HEMTs), but the mechanism by which it affects polarization Coulomb field (PCF) scattering remains largely unexplored. In this study, AlGaN/GaN MIS-HEMTs with LPCVD-Si3N4 gate dielectric thicknesses of 0 nm, 5 nm, and 20 nm were fabricated, and the influence of LPCVD-Si3N4 thickness on PCF scattering was systematically investigated. Through electrical measurements and theoretical calculations, the relationship between LPCVD-Si3N4 gate dielectric layer thickness, additional polarization charge (∆ρ), two-dimensional electron gas (2DEG) density, and 2DEG mobility was analyzed. The results show that increasing the LPCVD-Si3N4 thickness reduces the vertical electric field in the AlGaN barrier, weakening the inverse piezoelectric effect (IPE) and reducing ∆ρ. Further analysis reveals that the ∆ρ exhibits a non-monotonic dependence on negative gate voltage, initially increasing and subsequently decreasing, due to the competition between strain accumulation and stress relaxation. Meanwhile, the 2DEG mobility limited by PCF (μPCF) decreases monotonically with increasing negative gate voltage, mainly due to the progressive weakening of the 2DEG screening effect. The research results reveal the physical mechanism by which LPCVD-Si3N4 thickness regulates PCF scattering, providing theoretical guidance for optimizing gate dielectric parameters and enhancing the performance of AlGaN/GaN MIS-HEMTs.

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    Influence of the Bias Voltage on Effective Electron Velocity in AlGaN/GaN High Electron Mobility Transistors

    by Guangyuan Jiang, Peng Cui, Chen Fu, Yuanjie Lv, Ming Yang, Qianding Cheng, Yang Liu, Guangyuan Zhang

    The small-signal S parameters of the fabricated double-finger gate AlGaN/GaN high electron mobility transistors (HEMTs) were measured at various direct current quiescent operating points (DCQOPs). Under active bias conditions, small-signal equivalent circuit (SSEC) parameters such as Rs and Rd, and intrinsic parameters were extracted. Utilizing fT and the SSEC parameters, the effective electron velocity (νe−eff) and intrinsic electron velocity (νe−int) corresponding to each gate bias (VGS) were obtained. Under active bias conditions, the influence mechanism of VGS on νe−eff was systematically studied, and an expression was established that correlates νe−eff, νe−int, and bias-dependent parasitic resistances. Through the analysis of the main scattering mechanisms in AlGaN/GaN HEMTs, it has been discovered that the impact of VGS on νe−eff should be comprehensively analyzed from the aspects of νe−int and parasitic resistances. On the one hand, changes in VGS influence the intensity of polar optical phonon (POP) scattering and polarization Coulomb field (PCF) scattering, which lead to changes in νe−int dependent on VGS. The trend of νe−int with changes in VGS plays a dominant role in determining the trend of νe−eff with changes in VGS. On the other hand, both POP scattering and PCF scattering affect νe−eff through their impact on parasitic resistance. Since there is a difference in the additional scattering potential corresponding to the additional polarization charges (APC) between the gate-source/drain regions and the region under the gate, the mutual effects of PCF scattering on the under-gate electron system and the gate-source/drain electron system should be considered when adjusting the PCF scattering intensity through device structure optimization to improve linearity. This study contributes to a new understanding of the electron transport mechanisms in AlGaN/GaN HEMTs and provides a novel theoretical basis for improving device performance.

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