Wen Liu

In(Ga)As quantum dot (QD) with uniform size and controlled sites have great potential in optical communications and quantum computing. In this review, we focus on the site-controlled preparation of In(Ga)As quantum dot arrays based on patterned substrates, including the improvements made by the researchers to enhance the quantum dot site-control capability and optical quality. Based on the current research on site-controlled In(Ga)As QDs, it has been possible to grow uniformly ordered In(Ga)As QD arrays, in which the size, morphology, and nucleus location of each quantum dot can be precisely controlled. In addition, the study of deoxidation treatment of patterned substrates has led to the performance enhancement of the prepared QD arrays. Finally, we propose that the future development of site-controlled In(Ga)As QD arrays lies in improving the optical quality and tuning their emission wavelength to the telecommunication band.

Quantum dot solar cells (QDSCs) are regarded as one of the most efficient devices due to their intermediate band structures. A suitable light-trapping (LT) strategy matching the absorption spectrum is important to improve the photocurrent conversion efficiency of QDSCs. In this paper, we have proposed a design of the periodically patterned top and bottom dielectric nanopyramid arrays for highly efficient light trapping in GaAs-based QDSCs. The dielectric nanopyramid arrays significantly improve the light absorption of QDSCs in the longer wavelength between 0.8 µm and 1.2 µm. In addition, this LT structure ensures a completely flat window layer and back surface field layer while passivating these semiconductor surfaces. For the optimized double-sided structure, the short-circuit current generated by QDSC is 34.32mA/cm², where the photocurrent from the quantum dots (QDs) is 5.17mA/cm². Compared to the photocurrent of the QDSC without an LT structure, the photocurrent of the double-sided structure is increased by 84%. The QD photocurrent of the double-sided structure is increased by 570% compared to that of the QDSC without the LT structure.

The antireflection coating (ARC) suppresses surface light loss and thus improves the power conversion efficiency (PCE) of solar cells, which is its essential function. This paper reviews the latest applications of antireflection optical thin films in different types of solar cells and summarizes the experimental data. Basic optical theories of designing antireflection coatings, commonly used antireflection materials, and their classic combinations are introduced. Since single and double antireflection coatings no longer meet the research needs in terms of antireflection effect and bandwidth, the current research mainly concentrates on multiple layer antireflection coatings, for example, adjusting the porosity or material components to achieve a better refractive index matching and the reflection effect. However, blindly stacking the antireflection films is unfeasible, and the stress superposition would allow the film layer to fail quickly. The gradient refractive index (GRIN) structure almost eliminates the interface, which significantly improves the adhesion and permeability efficiency. The high-low-high-low refractive index (HLHL) structure achieves considerable antireflection efficiency with fewer materials while selecting materials with opposite stress properties improves the ease of stress management. However, more sophisticated techniques are needed to prepare these two structures. Furthermore, using fewer materials to achieve a better antireflection effect and reduce the impact of stress on the coatings is a research hotspot worthy of attention.

GaAs nanostructures have attracted more and more attention due to its excellent properties such as increasing photon absorption. The fabrication process on GaAs substrate was rarely reported, and most of the preparation processes are complex. Here, we report a black GaAs fabrication process using a simple inductively coupled plasma etching process, with no extra lithography process. The fabricated sample has a low reflectance value, close to zero. Besides, the black GaAs also displayed hydrophobic property, with a water contact angle of 125°. This kind of black GaAs etching process could be added to the fabrication workflow of photodetectors and solar cell devices to further improve their characteristics.

A miniature piezoresistive pressure sensor fabricated by temporary bonding technology was reported in this paper. The sensing membrane was formed on the device layer of an SOI (Silicon-On-Insulator) wafer, which was bonded to borosilicate glass (Borofloat 33, BF33) wafer for supporting before releasing with Cu-Cu bonding after boron doping and electrode patterning. The handle layer was bonded to another BF33 wafer after thinning and etching. Finally, the substrate BF33 wafer was thinned by chemical mechanical polishing (CMP) to reduce the total device thickness. The copper temporary bonding layer was removed by acid solution after dicing to release the sensing membrane. The chip area of the fabricated pressure sensor was of 1600 μm × 650 μm × 104 μm, and the size of a sensing membrane was of 100 μm × 100 μm × 2 μm. A higher sensitivity of 36 μV/(V∙kPa) in the range of 0–180 kPa was obtained. By further reducing the width, the fabricated miniature pressure sensor could be easily mounted in a medical catheter for the blood pressure measurement.

As three-dimensional (3D) nanostructures can significantly improve the absorption capacity of photons, it is widely used in various photovoltaic devices. However, the high-cost and complex preparation process of traditional 3D nanostructures restricted its development greatly. In this paper, a new type of nanocone cluster microstructure was prepared on polydimethylsiloxane (PDMS) substrate by using a simple template process. This novel nanocone cluster microstructure can significantly improve the light transmittance and reduce the light reflection, showing superior anti-reflection property. In the whole range of visible band, the nanocone cluster microstructure effectively reduces the reflectivity of the light, so that it remains below 3.5%. In addition, this kind of cluster microstructure showed excellent superhydrophobic property and self-cleaning ability with the contact angle of 151°.

With high power density, fast charging-discharging speed, and a long cycling life, supercapacitors are a kind of highly developed novel energy-storage device that has shown a growing performance and various unconventional shapes such as flexible, linear-type, stretchable, self-healing, etc. Here, we proposed a rational design of thin film, flexible micro-supercapacitors with in-plane interdigital electrodes, where the electrodes were fabricated using the oblique angle deposition technique to grow oblique Ni/NiO nanowire arrays directly on polyimide film. The obtained electrodes have a high specific surface area and good adhesion to the substrate compared with other in-plane micro-supercapacitors. Meanwhile, the as-fabricated micro-supercapacitors have good flexibility and satisfactory energy-storage performance, exhibiting a high specific capacity of 37.1 F/cm³, a high energy density of 5.14 mWh/cm³, a power density of up to 0.5 W/cm³, and good stability during charge-discharge cycles and repeated bending-recovery cycles, respectively. Our micro-supercapacitors can be used as ingenious energy storage devices for future portable and wearable electronic applications.

Light trapping is essential to improve the performance of thin film solar cells. In this paper, we performed a parametric optimization of double-sided skewed nanopyramid arrays that act as a light trapping scheme to increase light absorption in thin-film c-Si solar cells. Our theoretical optimization reveals that the short-circuit current density in a solar cell, employing only 1 μ m silicon could reach as high as 38.57 mA cm ⁻² , which is 17% and 245% higher than that of the Yablonovitch limit and planar-film counterparts, respectively. Furthermore, we analyzed the underlying physics of the light absorption enhancement through electric field intensity profiles.