Yidi Bao
Current Organizations / Institutes
The organizations/institutes from the scholar's latest article
Yidi Bao has a total of 13 co-authors. Here are the top co-authors by number of shared publications:
Chunxue Ji
3 shared publications- Xiaodong Wang
Engineering Research Center for Semiconductor Integrated Technology, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, People’s Republic of China
3 shared publications - Xiaoling Chen
Institute of Semiconductors Chinese Academy of Sciences, Institute of Semiconductors Chinese Academy of Sciences, No. A35, Tsinghua East Road, Haidian District, Beijing, China, Beijing, 100083, CHINA
3 shared publications Bo Wei
Engineering Research Center for Semiconductor Integrated Technology, Institute of Semiconductors Chinese Academy of Sciences, No.35, Qinghua East Road, Haidian District, Beijing, Beijing, Beijing, 100083, CHINA
2 shared publicationsFuhua Yang
Institute of Semiconductors Chinese Academy of Sciences, Institute of Semiconductors Chinese Academy of Sciences, No. A35, Tsinghua East Road, Haidian District, Beijing, China, Beijing, 100083, CHINA
2 shared publicationsGuiqiang Yang
Engineering Research Center for Semiconductor Integrated Technology, Institute of Semiconductors Chinese Academy of Sciences, No.35, Qinghua East Road, Haidian District, Beijing, Beijing, Beijing, 100083, CHINA
2 shared publications
Latest Publications
- 2 March 2026
- Published by Elsevier in Journal of Alloys and Compounds
- Vol. 1059
Experimental characterization of near-infrared absorption properties of InAs/GaAs quantum dots
- 2 March 2026
- Published by Elsevier in Journal of Alloys and Compounds
- Vol. 1059
Experimental characterization of near-infrared absorption properties of InAs/GaAs quantum dots
- 11 November 2024
- Published by IOP Publishing in Nanotechnology
- Vol. 36 (5) , 052001
Site-controlled growth of In(Ga)As/GaAs quantum dots on patterned substrate
In(Ga)As quantum dot (QD) with uniform size and controlled sites have great potential in optical communications and quantum computing. In this review, we focus on the site-controlled preparation of In(Ga)As quantum dot arrays based on patterned substrates, including the improvements made by the researchers to enhance the quantum dot site-control capability and optical quality. Based on the current research on site-controlled In(Ga)As QDs, it has been possible to grow uniformly ordered In(Ga)As QD arrays, in which the size, morphology, and nucleus location of each quantum dot can be precisely controlled. In addition, the study of deoxidation treatment of patterned substrates has led to the performance enhancement of the prepared QD arrays. Finally, we propose that the future development of site-controlled In(Ga)As QD arrays lies in improving the optical quality and tuning their emission wavelength to the telecommunication band.
- 11 November 2024
- Published by IOP Publishing in Nanotechnology
- Vol. 36 (5) , 052001
Site-controlled growth of In(Ga)As/GaAs quantum dots on patterned substrate
In(Ga)As quantum dot (QD) with uniform size and controlled sites have great potential in optical communications and quantum computing. In this review, we focus on the site-controlled preparation of In(Ga)As quantum dot arrays based on patterned substrates, including the improvements made by the researchers to enhance the quantum dot site-control capability and optical quality. Based on the current research on site-controlled In(Ga)As QDs, it has been possible to grow uniformly ordered In(Ga)As QD arrays, in which the size, morphology, and nucleus location of each quantum dot can be precisely controlled. In addition, the study of deoxidation treatment of patterned substrates has led to the performance enhancement of the prepared QD arrays. Finally, we propose that the future development of site-controlled In(Ga)As QD arrays lies in improving the optical quality and tuning their emission wavelength to the telecommunication band.
- 7 December 2023
- Published by IOP Publishing in Journal of Physics D: Applied Physics
- Vol. 57 (10) , 105103
Tuning electrical and optical properties of InAs/GaAs1−x Sb x quantum dots
Understanding the electrical and optical properties of InAs/GaAs(Sb) quantum dots (QDs) is essential for designing and improving the performance of related semiconductor QD devices. In this paper, the effects of In segregation, QD size, capping layer thickness and Sb composition on the electrical and optical properties of type I and type II InAs/GaAs1−x Sb x ( 0 ⩽ x ⩽ 1 ) QDs are systematically investigated and general regularities are summarized. The comparisons of electron distribution probabilities, interband and intraband transition energies and absorption coefficients show that In segregation and QD size have a strong influence on the electron energy level positions of InAs QDs and that the trade-offs between absorption peak energy, absorption intensity and radiative lifetime of InAs/GaAs1−x Sb x QDs can be optimized by adjusting the thickness and Sb composition of the GaAs1−x Sb x capping layer. The results obtained are promising for the applications in the pre-design and performance feedback of the QD devices such as QD lasers, QD infrared detectors and intermediate band solar cells.
- 7 December 2023
- Published by IOP Publishing in Journal of Physics D: Applied Physics
- Vol. 57 (10) , 105103
Tuning electrical and optical properties of InAs/GaAs1−x Sb x quantum dots
Understanding the electrical and optical properties of InAs/GaAs(Sb) quantum dots (QDs) is essential for designing and improving the performance of related semiconductor QD devices. In this paper, the effects of In segregation, QD size, capping layer thickness and Sb composition on the electrical and optical properties of type I and type II InAs/GaAs1−x Sb x ( 0 ⩽ x ⩽ 1 ) QDs are systematically investigated and general regularities are summarized. The comparisons of electron distribution probabilities, interband and intraband transition energies and absorption coefficients show that In segregation and QD size have a strong influence on the electron energy level positions of InAs QDs and that the trade-offs between absorption peak energy, absorption intensity and radiative lifetime of InAs/GaAs1−x Sb x QDs can be optimized by adjusting the thickness and Sb composition of the GaAs1−x Sb x capping layer. The results obtained are promising for the applications in the pre-design and performance feedback of the QD devices such as QD lasers, QD infrared detectors and intermediate band solar cells.