Qiang Chen

This study investigates the processing temperature characteristics and etching behavior of fused silica using an atmospheric pressure microwave plasma jet. The temperature distribution within the processing region was measured in real time via infrared thermography. The effects of microwave input power, argon flow rate, and CF₄ flow rate on the processing temperature were systematically examined using a single-factor approach. Experimental results reveal a strong positive correlation between the plasma temperature and microwave power. The temperature initially rises and then declines with increasing argon flow, peaking at 3 slm, while it increases and eventually stabilizes with higher CF₄ flow. Fixed-point etching demonstrates that the etching rate increases with rising processing temperature. Furthermore, heat accumulation during prolonged dwell time leads to a nonlinear increase in the removal rate. This effect can be effectively mitigated by employing a multi-segment processing strategy, enabling more stable and controllable material removal. The effectiveness of this processing method has also been verified on a fused quartz sub-mirror.

The polymer deposition layer (PDL) formed during inductively coupled plasma (ICP) processing significantly limits the figuring accuracy and surface quality of fused silica optics. This study investigates the formation mechanism, composition, and evolution of the PDL under varying dwell times and proposes an innovative dwell time gradient strategy to suppress roughness deterioration. A significant disparity in hardness and elastic modulus between the deposition layer and the substrate is revealed, explaining its preferential removal and protective buffering effect in computer-controlled optical surfacing (CCOS). A hybrid ICP-CCOS polishing process was developed for processing a ϕ100 mm fused silica mirror. The results show that within 33 min, the surface graphic error RMS was significantly reduced from 58.006 nm to 12.111 nm, and within 90 min, the surface roughness was ultra-precisely reduced from Ra 1.719 nm to Ra 0.151 nm. The average processing efficiency was approximately 0.63 cm²/min. Critically, a damage-free, ultra-smooth surface without subsurface damage (SSD) was successfully achieved. This hybrid process enables the simultaneous optimization of figure accuracy and roughness, eliminating the need for iterative figuring cycles. It provides a novel theoretical framework for high-precision figuring and post-ICP polymer removal, advancing the efficient fabrication of high-performance optics.

Advancements in astronomical telescopes and cutting-edge technologies, including deep ultraviolet (DUV) and extreme ultraviolet (EUV) lithography, have escalated demands and imposed stringent surface quality requirements on optical system components. Achieving near-ideal optical components requires ultra-smooth surfaces with sub-nanometer roughness, no sub-surface damage, minimal surface defects, low residual stresses, and intact lattice integrity. This necessity has driven the rapid development and diversification of ultra-smooth surface fabrication technologies. This paper summarizes recent advances in ultra-smooth surface processing technologies, categorized by their material removal mechanisms. A subsequent comparative analysis evaluates the roughness and polishing characteristics of ultra-smooth surfaces processed on various materials, including fused silica, monocrystalline silicon, silicon carbide, and sapphire. To maximize each process’s advantages and achieve higher-quality surfaces, the paper discusses tailored processing methods and iterations for different materials. Finally, the paper anticipates future development trends in response to current challenges in ultra-smooth surface processing technology, providing a systematic reference for the study of the production of large-sized freeform surfaces.