Tianxiang Dai
Current Organizations / Institutes
The organizations/institutes from the scholar's latest article
Research Subjects
Tianxiang Dai has a total of 6 co-authors. Here are the top co-authors by number of shared publications:
Chun Wa Chan
School of Engineering, University of Warwick Coventry CV4 7AL United Kingdom
1 shared publicationHuaping Jiang
Dynex Semiconductor Ltd. Lincoln United Kingdom
1 shared publication- Michael R. Jennings
Swansea University
1 shared publication - Peter Michael Gammon
University of Warwick
1 shared publication Phil A. Mawby
School of Engineering, University of Warwick Coventry CV4 7AL United Kingdom
1 shared publicationXc Deng
School of Engineering, University of Electronic Science and Technology of China Chengdu 610054 People's Republic of China
1 shared publication
Latest Publications
- Open Access
- 1 February 2018
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 54 (3) , 167-169
4H‐SiC trench MOSFET with integrated fast recovery MPS diode
A 4H‐SiC trench metal–oxide–semiconductor field‐effect‐transistor (MOSFET) design with an integrated merged PiN Schottky (MPS) diode is proposed. The Schottky contact is embedded on the bottom of the trench structure for the first time. The low electric field in the oxide and Schottky contact surface can be achieved simultaneously using the proposed integration design which enhances the oxide reliability and reduces leakage from the Schottky diode. The integration of the MPS diode reduces the total chip area and the required number of dies compared with the conventional method of using an external Schottky diode.
- 1 February 2018
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 54 (3) , 167-169
Open Access4H‐SiC trench MOSFET with integrated fast recovery MPS diode
A 4H‐SiC trench metal–oxide–semiconductor field‐effect‐transistor (MOSFET) design with an integrated merged PiN Schottky (MPS) diode is proposed. The Schottky contact is embedded on the bottom of the trench structure for the first time. The low electric field in the oxide and Schottky contact surface can be achieved simultaneously using the proposed integration design which enhances the oxide reliability and reduces leakage from the Schottky diode. The integration of the MPS diode reduces the total chip area and the required number of dies compared with the conventional method of using an external Schottky diode.