4H‐SiC trench MOSFET with integrated fast recovery MPS diode
Open Access
- 1 February 2018
- journal article
- research article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 54 (3) , 167-169
Abstract
A 4H‐SiC trench metal–oxide–semiconductor field‐effect‐transistor (MOSFET) design with an integrated merged PiN Schottky (MPS) diode is proposed. The Schottky contact is embedded on the bottom of the trench structure for the first time. The low electric field in the oxide and Schottky contact surface can be achieved simultaneously using the proposed integration design which enhances the oxide reliability and reduces leakage from the Schottky diode. The integration of the MPS diode reduces the total chip area and the required number of dies compared with the conventional method of using an external Schottky diode.Keywords
This publication has 3 references indexed in Scilit:
- 3.3-kV-Class 4H-SiC MeV-Implanted UMOSFET With Reduced Gate Oxide FieldIEEE Electron Device Letters, 2016
- Enhanced Inversion Mobility on 4H-SiC $(\hbox{11}\overline{\hbox{2}} \hbox{0})$ Using Phosphorus and Nitrogen Interface PassivationIEEE Electron Device Letters, 2013
- Advanced High-Voltage 4H-SiC Schottky RectifiersIEEE Transactions on Electron Devices, 2008