Xinhui Chen

Xinhui Chen

*This is an algorithmically generated author record based on publicly available information.

Current Organizations / Institutes

The organizations/institutes from the scholar's latest article

Previous Organizations / Institutes

The organizations / institutes from the scholar's other articles in the past ten years


Xinhui Chen has a total of 24 co-authors. Here are the top co-authors by number of shared publications:

  • Gang Liu

    School of Materials, Sun Yat-Sen University, Shenzhen, China

    2 shared publications
  • Aolin Wang

    National Key Laboratory of Power Semiconductor and Integration Technology, Engineering Research Center of Advanced Semiconductor Technology and Application of Ministry of Education, College of Semiconductors (College of Integrated Circuits), Hunan University, Changsha, China

    1 shared publication
  • Bin Yan

    Hangzhou Dianzi University

    1 shared publication
  • Biwei Chi

    College of Information Engineering, Jinhua University of Vocational Technology, Jinhua, China

    1 shared publication
  • Fan Shu

    Department of Micro/Nano Electronics, School of Electronic Information and Electrical Engineering, Shanghai Jiao Tong University, Shanghai 200240, China

    1 shared publication
  • Jianmin Zeng

    Department of Micro/Nano Electronics School of Electronic Information and Electrical Engineering Shanghai Jiao Tong University Shanghai 200240 China

    1 shared publication

Latest Publications

  • Open Access

    Fractional-Order Memristive Chaotic Circuit: Dynamic Characterization and Dual-Platform Co-Simulation

    by Xinhui Chen, Bin Yan, Peipei Jin, Long Chen

    Fractional-order modeling provides a flexible framework for extending memristive circuits with memory-dependent dynamics. This work develops a DC-driven memristive chaotic circuit within a unified fractional-order framework. The memristor is formulated with the Caputo derivative and discretized using Sayed’s scheme; the conventional first-order model is recovered at q=1, whereas 0<q<1 introduces nonlocal, history-dependent memory. The system dynamics are systematically analyzed through phase portraits, Lyapunov exponent spectra, bifurcation diagrams, C0 complexity, and the 0–1 test. Quantitative results show that the circuit exhibits a positive maximum Lyapunov exponent over the effective range q∈[0.78,1], with a representative value of LEmax=0.217 at q=0.98, and an averaged multi-scale C0 complexity of C0avg=0.12 in the parameter plane. Practical circuit-element bounds are set as L∈[1,10]H, C∈[0.1,0.14]F, and Vin∈[−5,−2]V, while the fractional-capacitor approximation is valid over f∈[0.01Hz,100Hz] with a magnitude error below 1.5dB. These results reveal that the fractional order q acts as a key bifurcation parameter regulating the system’s complexity and stability. To connect theoretical analysis with practical application, a dual-platform simulation framework is developed, utilizing MATLAB/Simulink for algorithmic verification and PSpice for circuit-level validation. An active emulator-based approach is proposed and validated at the circuit-simulation level. Operational amplifiers and analog multipliers are employed to implement the state equations by mapping the state variables to voltage signals. This study establishes a systematic methodology from mathematical modeling to circuit-level verification, emphasizing the significance of fractional-order control and emulation techniques in memristive chaotic systems.

  • Top Cited Papers

    Highly Reliable RRAM-Based Physical Unclonable Function With Auto-Write Technique

    by Li Ni, Siyuan Wu, Jinwei Pu, Shuwen Xin, Aolin Wang, Xinhui Chen, Zhengxun Lai, You Meng

    Physical unclonable functions (PUFs) have attracted significant attention for high-security applications, particularly in the Internet of Things (IoT). While resistive random access memory (RRAM)-based PUF technology offers excellent energy efficiency and integration density, its reliability remains a major challenge. This work proposes a highly reliable RRAM-based PUF that utilizes the 4T2R cross-coupled PUF cell to extract the response. Additionally, an automatic write-back technique is introduced to enhance the initial resistance mismatch in RRAM, thereby improving the PUF reliability. Experimental results demonstrate that the proposed PUF achieves outstanding performance, with near-ideal uniqueness (50.02%), uniformity (50.11%), and robust randomness (passing NIST 800-22 tests). The design exhibits robust reliability across a wide operating range (from $- 40~^{\circ }$ C to $120~^{\circ }$ C and 0.7 to 1.4 V), achieving a bit error rate (BER) of $\lt 4.89\times 10^{-7}$ . Furthermore, the energy consumption per bit is optimized to 4.8 fJ at 1.1 V, $25~^{\circ }$ C, showing its suitability for energy-constrained applications.


  • Open Access

    Using Spatial‐Temporal Attention for Video Quality Evaluation

    by Biwei Chi, Ruifang Su, Xinhui Chen

    With the rapid development of media, the role of video quality assessment (VQA) is becoming increasingly significant. VQA has applications in many domains. For example, in the field of remote medical diagnosis, it can enhance the quality of video communication between doctors and patients. Besides, in sports broadcasting, it can improve video clarity. Within VQA, the human visual system (HVS) is a crucial component that should be taken into consideration. Considering that attention is guided by goal‐driven and top‐down factors, such as anticipated locations or some attractive frames within the video, we propose a blind VQA algorithm based on spatial‐temporal attention model. Specifically, we first use two pretrained convolutional networks to extract low‐level static‐dynamic fusion features. Then, a spatial attention‐guided model is established to get more representative features of frame‐level quality perception. Next, through a temporal attention‐guided model, the video‐level features are obtained. Finally, the features are fed into a regression model to calculate the final video quality score. The experiments conducted on seven VQA databases reach the state‐of‐the‐art performance, demonstrating the effectiveness of our proposed method.


  • Open Access

    Organic Memristor with Synaptic Plasticity for Neuromorphic Computing Applications

    by Jianmin Zeng, Xinhui Chen, Shuzhi Liu, Qilai Chen, Gang Liu

    Memristors have been considered to be more efficient than traditional Complementary Metal Oxide Semiconductor (CMOS) devices in implementing artificial synapses, which are fundamental yet very critical components of neurons as well as neural networks. Compared with inorganic counterparts, organic memristors have many advantages, including low-cost, easy manufacture, high mechanical flexibility, and biocompatibility, making them applicable in more scenarios. Here, we present an organic memristor based on an ethyl viologen diperchlorate [EV(ClO4)]2/triphenylamine-containing polymer (BTPA-F) redox system. The device with bilayer structure organic materials as the resistive switching layer (RSL) exhibits memristive behaviors and excellent long-term synaptic plasticity. Additionally, the device’s conductance states can be precisely modulated by consecutively applying voltage pulses between the top and bottom electrodes. A three-layer perception neural network with in situ computing enabled was then constructed utilizing the proposed memristor and trained on the basis of the device’s synaptic plasticity characteristics and conductance modulation rules. Recognition accuracies of 97.3% and 90% were achieved, respectively, for the raw and 20% noisy handwritten digits images from the Modified National Institute of Standards and Technology (MNIST) dataset, demonstrating the feasibility and applicability of implementing neuromorphic computing applications utilizing the proposed organic memristor.


  • Open Access

    Metal–Organic Frameworks–Based Memristors: Materials, Devices, and Applications

    by Fan Shu, Xinhui Chen, Zhe Yu, Pingqi Gao, Gang Liu

    Facing the explosive growth of data, a number of new micro-nano devices with simple structure, low power consumption, and size scalability have emerged in recent years, such as neuromorphic computing based on memristor. The selection of resistive switching layer materials is extremely important for fabricating of high performance memristors. As an organic-inorganic hybrid material, metal-organic frameworks (MOFs) have the advantages of both inorganic and organic materials, which makes the memristors using it as a resistive switching layer show the characteristics of fast erasing speed, outstanding cycling stability, conspicuous mechanical flexibility, good biocompatibility, etc. Herein, the recent advances of MOFs-based memristors in materials, devices, and applications are summarized, especially the potential applications of MOFs-based memristors in data storage and neuromorphic computing. There also are discussions and analyses of the challenges of the current research to provide valuable insights for the development of MOFs-based memristors.


  • Open Access

    Reservoir Computing-Based Design of ZnO Memristor-Type Digital Identification Circuits

    by Lixun Wang, Yuejun Zhang, Zhecheng Guo, Zhixin Wu, Xinhui Chen, Shimin Du

    Reservoir Computing (RC) is a network architecture inspired by biological neural systems that maps time-dimensional input features to a high-dimensional space for computation. The key to hardware implementation of the RC system is whether sufficient reservoir states can be generated. In this paper, a laboratory-prepared zinc oxide (ZnO) memristor is reported and modeled. The device is found to have nonlinear dynamic responses and characteristics of simulating neurosynaptic long-term potentiation (LTP) and long-term depression (LTD). Based on this, a novel two-level RC structure based on the ZnO memristor is proposed. Novel synaptic encoding is used to maintain stress activity based on the characteristics of after-discharge and proneness to fatigue during synaptic transmission. This greatly alleviates the limitations of the self-attenuating characteristic reservoir of the duration and interval of the input signal. This makes the reservoir, in combination with a fully connected neural network, an ideal system for time series classification. The experimental results show that the recognition rate for the complete MNIST dataset is 95.08% when 35 neurons are present as hidden layers while achieving low training consumption.