Jianhang Ju
Current Organizations / Institutes
The organizations/institutes from the scholar's latest article
Research Subjects
Jianhang Ju has a total of 7 co-authors. Here are the top co-authors by number of shared publications:
- Enhao Wang
School of materials science and chemical engineering, Harbin University of Science and Technology, Harbin, China
1 shared publication - Jinna Liu
Key Laboratory of Superlight Material and Surface Technology of Ministry of Education, College of Material Science and Chemical Engineering, Harbin Engineering University, Harbin 150001, China
1 shared publication - Ling Weng
Harbin University of Science and Technology
1 shared publication - Wei Jiang
School of Materials Science and Chemical Engineering, Harbin University of Science and Technology, Harbin 150080, China
1 shared publication - Xiaofeng Wang
State Key Laboratory of Advanced Welding and Joining, Harbin Institute of Technology, Harbin 150006, China
1 shared publication - Yuanliang Sun
School of Materials Science and Chemical Engineering, Harbin University of Science and Technology, Harbin 150080, China
1 shared publication
Latest Publications
- Open Access
Simulation Study of Crystalline Al2O3 Thin Films Prepared at Low Temperatures: Effect of Deposition Temperature and Biasing Voltage
In this paper, classical molecular dynamics simulations were used to explore the impact of deposition temperature and bias voltage on the growth of Al2O3 thin films through magnetron sputtering. Ion energy distributions were derived from plasma mass spectrometer measurements. The fluxes of deposited particles (Ar+, Al+, and O−) were categorized into low, medium, and high energies, and the results show that the films are dominated by amorphous Al2O3 at low incident energies without applying bias. As the deposition temperature increased, the crystallinity of the films also increased, with the crystals predominantly consisting of γ-Al2O3. The crystal content of the deposited films increased when biased with −20 V compared to when no bias was applied. Crystalline films were successfully obtained at a deposition temperature of 773 K with a −20 V bias. When biased with −40 V, crystals could be obtained at a lower deposition temperature of 573 K. Increasing the bias enables the particles to have higher energy to overcome the nucleation barrier of the crystallization process, leading to a greater degree of film crystallization. At this stage, the average bond length between Al-O is measured to be approximately 1.89 Å to 1.91 Å, closely resembling that of the crystal.
Open AccessSimulation Study of Crystalline Al2O3 Thin Films Prepared at Low Temperatures: Effect of Deposition Temperature and Biasing Voltage
In this paper, classical molecular dynamics simulations were used to explore the impact of deposition temperature and bias voltage on the growth of Al2O3 thin films through magnetron sputtering. Ion energy distributions were derived from plasma mass spectrometer measurements. The fluxes of deposited particles (Ar+, Al+, and O−) were categorized into low, medium, and high energies, and the results show that the films are dominated by amorphous Al2O3 at low incident energies without applying bias. As the deposition temperature increased, the crystallinity of the films also increased, with the crystals predominantly consisting of γ-Al2O3. The crystal content of the deposited films increased when biased with −20 V compared to when no bias was applied. Crystalline films were successfully obtained at a deposition temperature of 773 K with a −20 V bias. When biased with −40 V, crystals could be obtained at a lower deposition temperature of 573 K. Increasing the bias enables the particles to have higher energy to overcome the nucleation barrier of the crystallization process, leading to a greater degree of film crystallization. At this stage, the average bond length between Al-O is measured to be approximately 1.89 Å to 1.91 Å, closely resembling that of the crystal.