Ruiyuan Bi

The enhancement of superconducting properties of high-temperature copper-oxide superconductors like B(P)SCCO remains a hot research topic in the field of superconducting materials. This study introduces GaP quantum dots (QDs) as a heterophase, leveraging their electroluminescent properties to enhance the superconductivity of B(P)SCCO. Experimental results demonstrate that the electroluminescence generated by GaP quantum dots (QDs) under an applied electric field induces tunable superconducting enhancement of B(P)SCCO. A reproducible trend of enhancement in the critical transition temperature (T_c) and depairing current density (J_d) is observed with increasing QD electroluminescent intensity, suggesting a positive correlation. This electroluminescence-induced enhancement dominates over the inherent impurity effects at optimal QD content.

The enhancement of superconducting properties in high-temperature copper-oxide superconductor B(P)SCCO remains a hot research topic in the field of superconducting materials. Building on previous research, here we introduce GaP quantum dots as an heterophase into the B(P)SCCO superconductor, aiming to enhance its superconductivity through the luminescent properties of GaP quantum dots. The experimental results demonstrate that the introduction of GaP quantum dots into B(P)SCCO generates significant tunable superconducting effects, leading to enhanced critical transition temperature (Tc), critical current density (Jc), and Meissner field (Hc) of B(P)SCCO with increasing luminescent intensity of the GaP quantum dots. The enhancement effect induced by GaP quantum dots exhibits a positive correlation with luminescent intensity, meaning samples with the addition of GaP quantum dots exhibiting higher luminescent intensity show elevated Tc, Jc, and Hc values. Unlike impurity effects, a distinct critical concentration dependency is observed. Notably, this GaP quantum dot modification strategy is not only effective in conventional superconductors but also applicable to high-temperature oxide superconductors.

Gallium-based light-emitting diodes (LEDs), including AlGaInP and GaN, have become the most widely used light-emitting devices in modern scientific research and practical applications. However, structures like carrier injection layers, active layers, and quantum well layers ensure the high luminescence efficiency of LEDs but also limit their applications at the micro- and nanoscale. Although the next generation of micrometer-scale light-emitting diodes (Micro-LEDs) has alleviated these issues to some extent, challenges such as edge effects and etching damage caused by size reduction lead to lower luminous efficiency and shorter lifetimes. Inspired by LED structure, this study designed and synthesized core–shell composite GaP:Zn/GaP/GaInP and GaP:Te/GaP nanoparticles using a thermal injection method. After high-temperature annealing, these composite materials demonstrated efficient electroluminescent performance under electric field excitation through band-edge transitions and the Zn_Ga-O_P recombination mechanism. Experimental results show that the GaP:Zn/GaP/GaInP-GaP:Te/GaP composite samples with doping concentrations of 15%Zn-8%Te, a core–shell precursor ratio of 1:1:1, and reaction times of 1 h:20 min:20 min exhibit the best electron–hole injection efficiency and bound-recombination efficiency. Under excitation by an external electric field, they demonstrated optimal electroluminescence performance, with a relative luminous intensity of 11,109.21 at 600 nm, approximately 15 times higher than that of the initial condition samples. In addition, this study systematically investigated the structure, morphology, and elemental composition of the composite materials using various characterization techniques, including X-ray diffraction (XRD), transmission electron microscopy (TEM), scanning electron microscopy (SEM), energy-dispersive X-ray spectroscopy (EDS), and X-ray photoelectron spectroscopy (XPS). These GaP-doped nanoparticles with a core–shell composite structure, inspired by LED design, exhibited outstanding electroluminescent performance, providing new insights into the development of novel micro- and nanoscale electroluminescent materials.