Qincheng Zheng
Current Organizations / Institutes
The organizations/institutes from the scholar's latest article
Research Subjects
Qincheng Zheng has a total of 11 co-authors. Here are the top co-authors by number of shared publications:
- Huikai Xie
Beijing Institute of Technology
4 shared publications Yulang Cheng
Beijing Institute of Technology
4 shared publicationsChenyu Bai
Beijing Institute of Technology
3 shared publications- Hao Chen
Beijing Institute of Technology
2 shared publications Ke Cao
School of Integrated Circuits and Electronics, Beijing Institute of Technology, Beijing, China
2 shared publications- Ke Cao
Beijing Institute of Technology
2 shared publications
Latest Publications
- 1 November 2026
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 73 (11) , 6774-6782
Study of Nonlinear Scanning Behaviors of PZT-Based Piezoelectric Micromirrors Under DC-Biasing
- 1 November 2026
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 73 (11) , 6774-6782
Study of Nonlinear Scanning Behaviors of PZT-Based Piezoelectric Micromirrors Under DC-Biasing
- 23 June 2025
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 72 (8) , 4369-4378
A High-SPL Full-Range PZT MEMS Speaker for In-Ear Applications
To address the challenge of insufficient full-range sound pressure level (SPL), particularly in the low-frequency range (20–100 Hz), in piezoelectric micro-electromechanical system (MEMS) speakers with limited area, a novel quasi-closed diaphragm design is proposed. The 6.25 mm2 diaphragm incorporates double-drive electrodes, a flexible coupling structure, and a central mass, subdivided by slits. Parylene-C acts as an acoustic isolation layer to prevent air leakage, a flexible coupling structure to reduce diaphragm stiffness, and significantly lowers the stress at the ends of the slits, enabling higher excitation voltages for improved SPL. Additionally, the flexible coupling structure reduces both electrode area and power consumption, compared to the rigid coupling structure. Tests conducted on an ear canal simulator show that compared to the rigid coupling design, the proposed speaker achieves a 13–15 dB SPL improvement from 20 Hz to 1 kHz under 2 Vpp excitation, with a 20% reduction in power consumption. Under 60 Vpp excitation, the proposed speaker produces SPL > 93 dB across the frequency range from 20 to 100 Hz, and SPL > 100 dB from 100 Hz to 20 kHz. Under 100 Vpp excitation, the design delivers SPL > 97 dB across the frequency range from 20 to 100 Hz. This work demonstrates the advantage of achieving high full-range SPL with a small diaphragm area through optimized design, offering a promising solution for the advancement of MEMS speakers.
- 23 June 2025
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 72 (8) , 4369-4378
A High-SPL Full-Range PZT MEMS Speaker for In-Ear Applications
To address the challenge of insufficient full-range sound pressure level (SPL), particularly in the low-frequency range (20–100 Hz), in piezoelectric micro-electromechanical system (MEMS) speakers with limited area, a novel quasi-closed diaphragm design is proposed. The 6.25 mm2 diaphragm incorporates double-drive electrodes, a flexible coupling structure, and a central mass, subdivided by slits. Parylene-C acts as an acoustic isolation layer to prevent air leakage, a flexible coupling structure to reduce diaphragm stiffness, and significantly lowers the stress at the ends of the slits, enabling higher excitation voltages for improved SPL. Additionally, the flexible coupling structure reduces both electrode area and power consumption, compared to the rigid coupling structure. Tests conducted on an ear canal simulator show that compared to the rigid coupling design, the proposed speaker achieves a 13–15 dB SPL improvement from 20 Hz to 1 kHz under 2 Vpp excitation, with a 20% reduction in power consumption. Under 60 Vpp excitation, the proposed speaker produces SPL > 93 dB across the frequency range from 20 to 100 Hz, and SPL > 100 dB from 100 Hz to 20 kHz. Under 100 Vpp excitation, the design delivers SPL > 97 dB across the frequency range from 20 to 100 Hz. This work demonstrates the advantage of achieving high full-range SPL with a small diaphragm area through optimized design, offering a promising solution for the advancement of MEMS speakers.
- 6 April 2025
- Published by Elsevier in Sensors and Actuators A: Physical
- Vol. 389
An ultra-high low-frequency SPL piezoelectric MEMS loudspeaker based on sputtered PZT
- 6 April 2025
- Published by Elsevier in Sensors and Actuators A: Physical
- Vol. 389
An ultra-high low-frequency SPL piezoelectric MEMS loudspeaker based on sputtered PZT