Rongxin Duan
Current Organizations / Institutes
The organizations/institutes from the scholar's latest article
Research Subjects
Research Interests
Rongxin Duan has a total of 8 co-authors. Here are the top co-authors by number of shared publications:
- Guodong Wang
Henan Polytechnic University
1 shared publication - Junjun Wang
School of Physics and Electronic Information Engineering, Henan Polytechnic University, Jiaozuo, China
1 shared publication - Lanlan Guo
School of Physics and Electronic Information Engineering, Henan Polytechnic University, Jiaozuo, 454003, People’s Republic of China
1 shared publication - Xiaojie Yang
Suzhou LiangSai Technology Co., Ltd., Suzhou 215123, China
1 shared publication - Xiaolian Liu
School of Physics and Electronic Information Engineering, Henan Polytechnic University, Jiaozuo 454003, China
1 shared publication - Yingli Yang
Instrumental Analysis Center, Henan Polytechnic University, Jiaozuo 454003, China
1 shared publication
Latest Publications
- Open Access
Enhancing the Solar-Blind UV Detection Performance of β-Ga2O3 Films Through Oxygen Plasma Treatment
This study systematically investigated the effects of oxygen plasma treatment on oxygen vacancy defects in sputtered β-gallium oxide (β-Ga2O3) films and their corresponding ultraviolet (UV) detection performance. The sputtered β-Ga2O3 film subjected to 1 min of oxygen plasma treatment exhibited optimal photodetection properties. Compared to the untreated sample, the dark current was reduced by approximately one order of magnitude to 0.378 pA at 10 V bias. It exhibited an 86% (from 2.92 s to 0.41 s) decrease in response time, a 41.6% increase in photocurrent, a very high photo-to-dark current ratio of 9.18 × 105, and a specific detectivity of 2.62 × 1010 cm·Hz1/2W−1 under 254 nm UV illumination intensity of 799 μW/cm2 at 10 V bias. Notably, appropriate oxygen plasma treatment minimizes electron capture, enhances the separation and collection of photogenerated carriers, and suppresses the persistent photoconductivity (PPC) effect, thus ultimately shortening the response time. Oxygen plasma processing thus provides an effective approach to fabricating high-performance β-Ga2O3 solar-blind photodetectors (SBPDs).
Open AccessEnhancing the Solar-Blind UV Detection Performance of β-Ga2O3 Films Through Oxygen Plasma Treatment
This study systematically investigated the effects of oxygen plasma treatment on oxygen vacancy defects in sputtered β-gallium oxide (β-Ga2O3) films and their corresponding ultraviolet (UV) detection performance. The sputtered β-Ga2O3 film subjected to 1 min of oxygen plasma treatment exhibited optimal photodetection properties. Compared to the untreated sample, the dark current was reduced by approximately one order of magnitude to 0.378 pA at 10 V bias. It exhibited an 86% (from 2.92 s to 0.41 s) decrease in response time, a 41.6% increase in photocurrent, a very high photo-to-dark current ratio of 9.18 × 105, and a specific detectivity of 2.62 × 1010 cm·Hz1/2W−1 under 254 nm UV illumination intensity of 799 μW/cm2 at 10 V bias. Notably, appropriate oxygen plasma treatment minimizes electron capture, enhances the separation and collection of photogenerated carriers, and suppresses the persistent photoconductivity (PPC) effect, thus ultimately shortening the response time. Oxygen plasma processing thus provides an effective approach to fabricating high-performance β-Ga2O3 solar-blind photodetectors (SBPDs).