Gouranga Mandal
Current Organizations / Institutes
The organizations/institutes from the scholar's latest article
Research Subjects
Gouranga Mandal has a total of 3 co-authors. Here are the top co-authors by number of shared publications:
- Mourina Ghosh
Electronics and Communication Engineering Department, Indian Institute of Information Technology Guwahati, Guwahati, India
1 shared publication Pulak Mondal
Institute of Radio Physics and Electronics Department, Calcutta University, Kolkata, India
1 shared publication- Sung-Mo Kang
Baskin School of Engineering, University of California at Santa Cruz, Santa Cruz, CA, USA
1 shared publication
Latest Publications
- 2 February 2026
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems
- Vol. PP (02780070) , 1
Two-MOSFETs-Based Memristor Emulator for Ultra-High-Frequency Signal Processing
This article proposes a novel memristor emulator design capable of operating in the ultra-high-frequency range. The proposed memristor emulator, implemented using two nMOS transistors and a grounded MOS-capacitor, is designed and simulated in the Analog Design Environment of Cadence Virtuoso using a 90nm CMOS technology. It achieves a maximum operating frequency of 3 GHz, with a power consumption of 13.52 μW. The robustness of the proposed memristor emulator is validated through extensive simulations, including temperature variations, process corners, capacitance variations, and different combinations. Additionally, short-term non-volatility analysis has been conducted to evaluate its memory characteristics. The layout of the proposed memristor emulator is presented, along with pre-layout and post-layout simulations. Furthermore, hardware validation has been performed using commercial ICs (IRF840). Applications such as an 8:3 encoder, an adaptive neural network, and a ring oscillator circuit using the proposed memristor emulator are also reported in this article. The simulation results confirm that the memristive encoder functions correctly at 2 GHz and the ring oscillator generates an oscillation frequency greater than 2 GHz, demonstrating the emulator’s suitability for ultra-high-frequency applications.
- 2 February 2026
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems
- Vol. PP (02780070) , 1
Two-MOSFETs-Based Memristor Emulator for Ultra-High-Frequency Signal Processing
This article proposes a novel memristor emulator design capable of operating in the ultra-high-frequency range. The proposed memristor emulator, implemented using two nMOS transistors and a grounded MOS-capacitor, is designed and simulated in the Analog Design Environment of Cadence Virtuoso using a 90nm CMOS technology. It achieves a maximum operating frequency of 3 GHz, with a power consumption of 13.52 μW. The robustness of the proposed memristor emulator is validated through extensive simulations, including temperature variations, process corners, capacitance variations, and different combinations. Additionally, short-term non-volatility analysis has been conducted to evaluate its memory characteristics. The layout of the proposed memristor emulator is presented, along with pre-layout and post-layout simulations. Furthermore, hardware validation has been performed using commercial ICs (IRF840). Applications such as an 8:3 encoder, an adaptive neural network, and a ring oscillator circuit using the proposed memristor emulator are also reported in this article. The simulation results confirm that the memristive encoder functions correctly at 2 GHz and the ring oscillator generates an oscillation frequency greater than 2 GHz, demonstrating the emulator’s suitability for ultra-high-frequency applications.