Minuk Song
Current Organizations / Institutes
The organizations/institutes from the scholar's latest article
Research Subjects
Minuk Song has a total of 27 co-authors. Here are the top co-authors by number of shared publications:
- Chul-Ho Lee
Seoul National University
1 shared publication - Dohyung Lee
Korea Research Institute of Chemical Technology
1 shared publication Dong Won Jeon
Sungkyunkwan University
1 shared publication- Dong-Ho Kang
Gwangju Institute of Science and Technology
1 shared publication - Gius Uddin
Aalto University
1 shared publication - Gyunghyun Jang
Department of Semiconductor Engineering Gwangju Institute of Science and Technology (GIST) Gwangju Republic of Korea
1 shared publication
Latest Publications
- Open Access
- 20 October 2026
- Published by Springer Nature in Research Square
Topological-Insulator Heterophase Gate Stacks for Transistor Electrostatics
Conventional gate-stack scaling reduces dielectric thickness and increases permittivity while largely treating the position and electronic character of the gate-side screening boundary as fixed. Here we show that this boundary can be engineered by converting the surface of the topological insulator Bi 2 Se 3 into insulating high-κ BiF 3 . Position-resolved calculations reveal a gap-opened immediate amorphous-BiF 3 /crystalline-Bi 2 Se 3 interface and a reconstructed gap-closed Bi 2 Se 3 -derived state in the adjacent subinterface layer, accompanied by a localized interfacial dipole. Capacitor measurements independently resolve a finite series response consistent with electronic compressibility at this boundary; this response lowers the nominal stack capacitance. Despite this capacitance penalty, MoS 2 transistors with closely matched BiF 3 thicknesses and a common BiF 3 /MoS 2 channel-side material interface exhibit near-thermionic-limit switching, negligible hysteresis and substantially weaker subthreshold drain-bias dependence than BiF 3 -only controls. These results identify the position and electronic character of the gate-side screening boundary as additional design variables for transistor electrostatics beyond nominal dielectric capacitance.
- 20 October 2026
- Published by Springer Nature in Research Square
Open AccessTopological-Insulator Heterophase Gate Stacks for Transistor Electrostatics
Conventional gate-stack scaling reduces dielectric thickness and increases permittivity while largely treating the position and electronic character of the gate-side screening boundary as fixed. Here we show that this boundary can be engineered by converting the surface of the topological insulator Bi 2 Se 3 into insulating high-κ BiF 3 . Position-resolved calculations reveal a gap-opened immediate amorphous-BiF 3 /crystalline-Bi 2 Se 3 interface and a reconstructed gap-closed Bi 2 Se 3 -derived state in the adjacent subinterface layer, accompanied by a localized interfacial dipole. Capacitor measurements independently resolve a finite series response consistent with electronic compressibility at this boundary; this response lowers the nominal stack capacitance. Despite this capacitance penalty, MoS 2 transistors with closely matched BiF 3 thicknesses and a common BiF 3 /MoS 2 channel-side material interface exhibit near-thermionic-limit switching, negligible hysteresis and substantially weaker subthreshold drain-bias dependence than BiF 3 -only controls. These results identify the position and electronic character of the gate-side screening boundary as additional design variables for transistor electrostatics beyond nominal dielectric capacitance.