Xunyao Luo
Research Subjects
Xunyao Luo has a total of 28 co-authors. Here are the top co-authors by number of shared publications:
- Andrew J. Ramsay
Hitachi Cambridge Laboratory, Hitachi Europe Ltd., Cambridge, UK
1 shared publication - Bart Raes
IMEC, Leuven, Belgium
1 shared publication - Charles Smith
Hitachi Cambridge Laboratory
1 shared publication - Clement Godfrin
IMEC, Leuven, Belgium
1 shared publication - Danny Wan
IMEC, Leuven, Belgium
1 shared publication - Digh Hisamoto
Research & Development Group, Hitachi Ltd., Kokubunji, Tokyo 185-8601, Japan
1 shared publication
Latest Publications
- Open Access
- 26 October 2026
- Published by AIP Publishing in Applied Physics Letters
- Vol. 129 (17)
High-fidelity qubit control in a natural Si-MOS quantum dot using a 300 mm silicon on insulator wafer
We demonstrate high-fidelity single qubit control in a natural Si-MOS quantum dot fabricated in an industrial 300 mm wafer process on a silicon on insulator wafer using electron spin resonance. A relatively high optimal Rabi frequency of 5 MHz is achieved, decoupling the electron spin from its 29Si environment. Tracking the qubit frequency reduces the impact of low-frequency noise in the qubit frequency and improves the TRabi from 7 to 11 μs at a Rabi frequency of 5 MHz, resulting in Q-factors exceeding 50. Randomized benchmarking returns an average single gate control fidelity of 99.5±0.3%. As a result of pulse-area calibration, this fidelity is limited by the Rabi Q-factor. These results show that a fast Rabi frequency and a feedback protocol enable high fidelity in these Si-MOS devices, despite the low-frequency magnetic noise.
- 26 October 2026
- Published by AIP Publishing in Applied Physics Letters
- Vol. 129 (17)
Open AccessHigh-fidelity qubit control in a natural Si-MOS quantum dot using a 300 mm silicon on insulator wafer
We demonstrate high-fidelity single qubit control in a natural Si-MOS quantum dot fabricated in an industrial 300 mm wafer process on a silicon on insulator wafer using electron spin resonance. A relatively high optimal Rabi frequency of 5 MHz is achieved, decoupling the electron spin from its 29Si environment. Tracking the qubit frequency reduces the impact of low-frequency noise in the qubit frequency and improves the TRabi from 7 to 11 μs at a Rabi frequency of 5 MHz, resulting in Q-factors exceeding 50. Randomized benchmarking returns an average single gate control fidelity of 99.5±0.3%. As a result of pulse-area calibration, this fidelity is limited by the Rabi Q-factor. These results show that a fast Rabi frequency and a feedback protocol enable high fidelity in these Si-MOS devices, despite the low-frequency magnetic noise.