Single-Event Transient Pulse Quenching in Advanced CMOS Logic Circuits
Authors:
- 8 December 2009
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Nuclear Science
- Vol. 56 (6) , 3050-3056
Abstract
Heavy-ion broad-beam experiments on a 130 nm CMOS technology have shown anomalously-short single-event transient pulse widths. 3-D TCAD mixed-mode modeling in 90 nm and 130 nm bulk CMOS has identified a mechanism for simultaneous charge collection on proximal circuit nodes interacting in a way as to truncate, or ¿quench,¿ a propagated voltage transient, effectively limiting the observed SET pulse widths at high LET. This quenching mechanism is described and analyzed.Keywords
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