Origins of Low-Frequency Noise and Interface Traps in 4H-SiC MOSFETs
- 13 December 2012
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters
- Vol. 34 (1) , 117-119
Abstract
Detailed studies of the temperature and voltage dependences of the low-frequency noise of 4H-SiC MOSFETs and TCAD simulations show that the noise is caused primarily by interface traps. First-principle calculations identify these traps as carbon vacancy clusters and nitrogen dopant atoms at or near the SiC/SiO2 interface.Keywords
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