Total-Dose-Induced Threshold Voltage Shift Dependence on Tier Pitch in 3-D nand Flash Memories
- 26 November 2024
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Nuclear Science
- Vol. 72 (4) , 1237-1242
Abstract
The incessant scaling in the integration density of 3D NAND Flash memories is mostly achieved through the combination of wordline stacking and reduction of the distance between wordlines (tier pitch). In this paper, the impact of tier pitch scaling on total ionizing dose sensitivity of 3D NAND Flash cells is investigated in memories using charge-trap technology, in terms of threshold voltage shifts and raw bit errors. Experimental results show a mild dependence of TID effects on the tier pitch. The physical mechanisms are discussed, and possible scaling trends are analyzed.Keywords
Funding Information
- European Union’s Horizon 2020 Research and Innovation Program (101008126)
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