Sample-to-Sample Variability and Bit Errors Induced by Total Dose in Advanced NAND Flash Memories
- 25 November 2014
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Nuclear Science
- Vol. 61 (6) , 2889-2895
Abstract
The variability in the total ionizing dose response of 25-nm single level cell NAND Flash memories from two different lots is studied. More than 1 Terabit of floating gate cells were irradiated with gamma rays and the number of errors was statistically analyzed. The behavior of the two lots is remarkably different in terms of floating gate errors. The statistical parameters such as mean, standard deviation, and shapes of the error distributions were studied. The sample-to-sample statistical distribution of TID errors is not Gaussian and it is attributed to variability in neutral cells, due to phenomena such as random discrete dopant fluctuations. Finally, the impact of scaling on variability is discussed.Keywords
Funding Information
- ESA
This publication has 16 references indexed in Scilit:
- Degradation of Sub 40-nm NAND Flash Memories Under Total Dose IrradiationIEEE Transactions on Nuclear Science, 2012
- Heavy Ion Sensitivity of 16/32-Gbit NAND-Flash and 4-Gbit DDR3 SDRAM2012
- Scaling Effects in Highly Scaled Commercial Nonvolatile Flash Memories2012
- Experimental characterization of process corners effect on SRAM alpha and neutron Soft Error Rates2012
- Comparative Simulation Study of the Different Sources of Statistical Variability in Contemporary Floating-Gate Nonvolatile MemoryIEEE Transactions on Electron Devices, 2011
- Impact of Neutral Threshold-Voltage Spread and Electron-Emission Statistics on Data Retention of Nanoscale nand FlashIEEE Electron Device Letters, 2010
- Total Ionizing Dose Effects in NOR and NAND Flash MemoriesIEEE Transactions on Nuclear Science, 2007
- Degradation of floating-gate memory reliability by few electron phenomenaIEEE Transactions on Electron Devices, 2006
- Charge loss after /sup 60/Co irradiation of flash arraysIEEE Transactions on Nuclear Science, 2004
- Radiation response of floating gate EEPROM memory cellsIEEE Transactions on Nuclear Science, 1989