Harnessing nonlinear conductive characteristic of TiO2/HfO2 memristor crossbar for implementing parallel vector–matrix multiplication
Open Access
- 4 April 2024
- journal article
- Published by AIP Publishing in APL Machine Learning
- Vol. 2 (2)
Abstract
Memristor crossbar arrays are expected to achieve highly energy-efficient neuromorphic computing via implementing parallel vector–matrix multiplication (VMM) in situ. The similarities between memristors and neural synapses offer opportunities for realizing hardware-based brain-inspired computing, such as spike neural networks. However, the nonlinear I–V characteristics of the memristors limit the implementation of parallel VMM on passive memristor crossbar arrays. In our work, we propose to utilize differential conductance as a synaptic weight to implement linear VMM operations on a passive memristor array in parallel. We fabricated a TiO2/HfO2 memristor crossbar array, in which differential-conductance-based synaptic weight exhibits plasticity, nonvolatility, multi-states, and tunable ON/OFF ratio. The noise-dependent accuracy performance of VMM operations based on the proposed approach was evaluated, offering an optimization guideline. Furthermore, we demonstrated a spike neural network circuit capable of processing small spiking signals through the differential-conductance-based synapses. The experimental results showcase effective space-coded and time-coded spike pattern recognition. Importantly, our work opens up new possibilities for the development of passive memristor arrays, leading to increased energy and area efficiency in brain-inspired chips.Keywords
Funding Information
- National Key Research and Development Program of China (2023YFF1203600)
- National Natural Science Foundation of China (62305155, 62122036, 62034004, 61921005, 12074176)
- the Strategic Priority Research Program of the Chinese Academy of Sciences (XDB44000000)
- China Postdoctoral Science Foundation (2023M731582, BX20230153)
- the Fundamental Research Funds for Central Universities (020414380084, 020414380155)
- Jiangsu Funding Program for Excellent Postdoctoral Talent (2023ZB079)
- The AIQ Foundation
This publication has 30 references indexed in Scilit:
- Highly Stable HfO2 Memristors through van der Waals Electrode Lamination and DelaminationNano Letters, 2023
- A Memristor with Low Switching Current and Voltage for 1S1R Integration and Array OperationAdvanced Electronic Materials, 2020
- A review of learning in biologically plausible spiking neural networksNeural Networks, 2020
- A Low‐Current and Analog Memristor with Ru as Mobile SpeciesAdvanced Materials, 2020
- A Braitenberg Vehicle Based on Memristive Neuromorphic CircuitsAdvanced Intelligent Systems, 2019
- Face classification using electronic synapsesNature Communications, 2017
- Memristors with diffusive dynamics as synaptic emulators for neuromorphic computingNature Materials, 2016
- A fast, high-endurance and scalable non-volatile memory device made from asymmetric Ta2O5−x/TaO2−x bilayer structuresNature Materials, 2011
- The missing memristor foundNature, 2008
- Networks of spiking neurons: The third generation of neural network modelsNeural Networks, 1997