Morphological and structural characteristics of homoepitaxial GaN grown by metalorganic chemical vapour deposition (MOCVD)
Authors:
- J.L. WeyherJWJ.L. Weyher
- P.D. BrownPBP.D. Brown
- A.R.A. ZaunerAZA.R.A. Zauner
- S. MüllerSMS. Müller
- C.B. BoothroydCBC.B. Boothroyd
- D.T. FoordDFD.T. Foord
- P.R. HagemanPHP.R. Hageman
- C.J. HumphreysCHC.J. Humphreys
- P.K. LarsenPLP.K. Larsen
- I. GrzegoryIGI. Grzegory
- S. PorowskiSPS. Porowski
- 1 August 1999
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 204 (4) , 419-428
Abstract
No abstract availableThis publication has 37 references indexed in Scilit:
- An atomic force microscopy study of a temperature dependent morphology transition of GaN grown on sapphire by MOCVDJournal of Crystal Growth, 1999
- Determination of the atomic structure of inversion domain boundaries in α-GaN by transmission electron microscopyPhilosophical Magazine A, 1998
- Polarity of epitaxial layers and (1210)prismatic defects in GaN and AIN grown on the (0001)Sisurface of 6H-SiCPhilosophical Magazine A, 1997
- Growth of gallium nitride by hydride vapor-phase epitaxyJournal of Crystal Growth, 1997
- Correlation of cathodoluminescence inhomogeneity with microstructural defects in epitaxial GaN grown by metalorganic chemical-vapor depositionApplied Physics Letters, 1997
- Homoepitaxy of GaN on polished bulk single crystals by metalorganic chemical vapor depositionApplied Physics Letters, 1996
- Surface orientation dependence of growth rate of cubic GaNJournal of Crystal Growth, 1994
- Orientation dependence of S, Zn, Si, Te, and Sn doping in OMCVD growth of InP and GaAs: application to DH lasers and lateral p—n junction arrays grown on non-planar substratesJournal of Crystal Growth, 1991
- Orientation dependence of GaAs growth in low-pressure OMVPEJournal of Crystal Growth, 1987
- Influence of Vapor Composition on the Growth Rate and Morphology of Gallium Arsenide Epitaxial FilmsJournal of the Electrochemical Society, 1964