Enhancement-mode AlGaN/GaN HEMTs fabricated by fluorine plasma treatment

This publication has 11 references indexed in Scilit:

• Gain Improvement of Enhancement-Mode AlGaN/GaN High-Electron-Mobility Transistors Using Dual-Gate Architecture
  Japanese Journal of Applied Physics, 2008
• High-performance enhancement-mode AlGaN/GaN HEMTs using fluoride-based plasma treatment
  IEEE Electron Device Letters, 2005
• Gate-recessed AlGaN-GaN HEMTs for high-performance millimeter-wave applications
  IEEE Electron Device Letters, 2005
• Recessed-gate enhancement-mode GaN HEMT with high threshold voltage
  Electronics Letters, 2005
• Non-Recessed-Gate Enhancement-Mode AlGaN/GaN High Electron Mobility Transistors with High RF Performance
  Japanese Journal of Applied Physics, 2004
• AlGaN/GaN HEMTs on SiC with f/sub T/ of over 120 GHz
  IEEE Electron Device Letters, 2002
• Enhancement mode AlGaN/GaN HFET with selectivelygrown pn junction gate
  Electronics Letters, 2000
• GaN/AlGaN high electron mobility transistors withf _τ of 110 GHz
  Electronics Letters, 2000
• High-power microwave GaN/AlGaN HEMTs on semi-insulating silicon carbide substrates
  IEEE Electron Device Letters, 1999
• Two-dimensional electron gases induced by spontaneous and piezoelectric polarization charges in N- and Ga-face AlGaN/GaN heterostructures
  Journal of Applied Physics, 1999