Chemical Vapor Deposition of Ru Thin Films with an Enhanced Morphology, Thermal Stability, and Electrical Properties Using a RuO₄ Precursor

This publication has 11 references indexed in Scilit:

• Al‐Doped TiO₂ Films with Ultralow Leakage Currents for Next Generation DRAM Capacitors
  Advanced Materials, 2008
• Atomic Layer Deposition of Ru Thin Films Using 2,4-(Dimethylpentadienyl)(ethylcyclopentadienyl)Ru by a Liquid Injection System
  Journal of the Electrochemical Society, 2007
• A new RuO4 solvent solution for pure ruthenium film depositions
  Microelectronic Engineering, 2006
• High dielectric constant TiO2 thin films on a Ru electrode grown at 250 °C by atomic-layer deposition
  Applied Physics Letters, 2004
• Atomic layer deposition of noble metals: Exploration of the low limit of the deposition temperature
  Journal of Materials Research, 2004
• Atomic Layer Deposition of Ruthenium Thin Films from Ru(thd)₃ and Oxygen
  Chemical Vapor Deposition, 2004
• Low-temperature chemical vapor deposition and scaling limit of ultrathin Ru films
  Applied Physics Letters, 2004
• Ruthenium Film with High Nuclear Density Deposited by MOCVD Using a Novel Liquid Precursor
  Electrochemical and Solid-State Letters, 2003
• Ruthenium Films Prepared by Liquid Source Metalorganic Chemical Vapor Deposition Using Ru(dpm)3 Dissolved with Tetrahydrofuran Solvent
  Japanese Journal of Applied Physics, 2002
• Thermodynamic Calculations and Metallorganic Chemical Vapor Deposition of Ruthenium Thin Films Using Bis(ethyl-π-cyclopentadienyl)Ru for Memory Applications
  Journal of the Electrochemical Society, 2000