Temperature-Dependent Detrapping Behavior of p-/n-Type Ferroelectric FETs With Si/SiGe Channel

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Abstract
The growing demand on new computer architectures, particularly in applications such as in-memory computing, may necessitate embedded non-volatile memories. Ferroelectric field-effect transistors offer both n-type and p-type functionality based on conventional CMOS technology. However, the issue of carrier (de)trapping, which shifts the threshold voltage shortly after the write operation, remains a challenge for applications requiring high frequency or fast access. Therefore, further understanding of the mechanism of the (de)trapping process is necessary to enhance their feasibility. While the superior room-temperature performance of p-type Si FeFETs is known, the underlying mechanisms of the detrapping process remain unclear. In this study, we perform the first systematic investigation of the (de)trapping behavior across a wide temperature range. We reveal a classic thermally-activated detrapping in n-FeFETs, extracting activation energies of 0.208 eV and 0.288 eV for Si and SiGe channels, respectively. More importantly, we uncover an anomalous, non-monotonic temperature dependence in p-FeFETs, suggesting a more complex mechanism beyond simple thermal emission. These findings provide critical insights into the physical origins of the detrapping process.
Funding Information
  • T4T Project (16ME0483)
  • Bundesministerium für Forschung, Technologie und Raumfahrt
  • State of Saxony in the frame of the Important Project of Common European Interest (16ME0483)

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