Multi-Gate SOI MOSFET Operations in Harsh Environments
Authors:
- 1 October 2007
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE) in 2007 IEEE International SOI Conference
- No. 1078621X,p. 29-30
Abstract
This paper reviews MuGFET (multi-gate MOSFET) devices performance under extreme temperature range (5-573 K) and total radiation dose up to 6 Mrad. It is concluded that MuGFET is not only a good platform for CMOS scaling, but also an excellent platform for operation in harsh environments.Keywords
This publication has 4 references indexed in Scilit:
- Radiation Dose Effects in Trigate SOI MOS TransistorsIEEE Transactions on Nuclear Science, 2006
- Total Ionizing Dose Effects on Triple-Gate FETsIEEE Transactions on Nuclear Science, 2006
- Temperature effects on trigate SOI MOSFETsIEEE Electron Device Letters, 2006
- Properties of high-temperature off-state currents in SOI MOSFETs derived from the diffusion mechanism1999