Modular HfOx-RRAM for On-Demand Micromodular Electronics

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Abstract
Micromodular metal-HfOx-metal resistive random-access memories (RRAM) were fabricated, transferred to foreign substrates, and contacted using high-resolution electrohydrodynamic jet (e-jet) printing. The modular RRAM exhibited bipolar switching at low operating voltages and multi-level analog resistance states programmable using variable amplitude voltage pulses. These variable resistance RRAMs were also integrated with an amplifier and a bandpass filter to modulate their gain and corner frequencies. This work enables integration of high-quality RRAM devices in modular circuits and paves the way for microscale heterogeneous integration at the device level.
Funding Information
  • Defense Advanced Research Projects Agency (W911NF2110298)
  • Georgia Tech Institute for Matter and Systems, a member of the National Nanotechnology Coordinated Infrastructure (NNCI), though the National Science Foundation (ECCS-2025462)

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