Rebecca K. Banner

The integration of high‐performance microelectronics onto flexible, sustainable substrates is important for advancing eco‐friendly technologies. This study presents an approach for creating circuits comprised of silicon micromodular transistors on cellulose nanomaterial (CNM)‐coated paper substrates with silver nanoparticle interconnects formed using electrohydrodynamic jet (e‐jet) printing. The transistors exhibit on/off ratios of ∼10 ⁷ , threshold voltages of 0.00 ± 0.06 V, subthreshold slopes of 102 ± 5 mV/decade, and peak effective mobilities of 430 ± 60 cm ² V ⁻¹ s ⁻¹ . Cellulose nanofibril (CNF) and cellulose nanocrystal (CNC) coatings are evaluated for mechanical and electrical performance. CNF‐based coatings offer lower reverse saturation current despite higher surface roughness, while smoother CNC‐based coatings exhibit higher reverse saturation current. Wired micromodular transistors maintain performance under radii of curvature bending strain as small as 2.3 mm. A depletion‐load inverter serves as proof‐of‐concept micromodular circuitry. To the best of our knowledge, this work demonstrates a circuit assembly technique on paper that mitigates many of the trade‐offs of previous paper‐based platforms.

High‐resolution printing offers promising avenues for packaging micro‐ and nanoscale modular electrical components, enabling hybrid, high‐performance circuits. The miniaturization of component interfaces imposes stringent requirements on printed interconnect resolution, conductivity, and structural robustness. This work systematically investigates the fabrication and characterization of submicron‐to‐micron scale (300 nm–3 ) metal nanoparticle interconnects, focusing on the interplay between printing parameters, multilayer deposition, and thermal sintering conditions. Silver (Ag) and gold (Au) colloidal inks are printed with controlled cross‐sectional geometries and sintered under dry air, forming gas, and nitrogen atmospheres. Correlations between geometry, sintering atmosphere, and interconnect resistivity reveal that oxygen‐rich and reducing environments promote nanoparticle coalescence, while resistivity and long‐term stability are strongly dependent on cross‐sectional area. Optimized processing yields Au interconnects with widths down to and resistivity of . Integration with micromodular transistor circuits demonstrates that interconnect geometry and device interface quality strongly influence series resistance, and analysis of failure modes identifies strategies to improve reliability. These results establish a framework for designing electrically robust, high‐resolution printed interconnects, enabling reliable integration into next‐generation microelectronic packaging and hybrid interconnection technologies.

Micromodular metal-HfOx-metal resistive random-access memories (RRAM) were fabricated, transferred to foreign substrates, and contacted using high-resolution electrohydrodynamic jet (e-jet) printing. The modular RRAM exhibited bipolar switching at low operating voltages and multi-level analog resistance states programmable using variable amplitude voltage pulses. These variable resistance RRAMs were also integrated with an amplifier and a bandpass filter to modulate their gain and corner frequencies. This work enables integration of high-quality RRAM devices in modular circuits and paves the way for microscale heterogeneous integration at the device level.