Increasing EMI Immunity in Novel Low-Voltage CMOS OpAmps
Author:
- 13 July 2012
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electromagnetic Compatibility
- Vol. 54 (4) , 947-950
Abstract
An easy solution to increase the immunity to electromagnetic interferences in recent low-voltage CMOS amplifiers is presented. It is based on a simple modification of the input stage, which can be fabricated in standard CMOS technologies and does not require extra mask levels, such as triple well, nor external components. Analysis and results are provided for very large interferences, arising from the input pin.Keywords
This publication has 10 references indexed in Scilit:
- EMI susceptibility in bulk-driven Miller opampElectronics Letters, 2010
- CMOS OpAmp Resisting to Large Electromagnetic InterferencesIEEE Transactions on Electromagnetic Compatibility, 2010
- Operational amplifier immune to EMI with no baseband performance degradationElectronics Letters, 2010
- A CMOS source-buffered differential input stage with high EMI suppression2008
- Design of an Operational Amplifier Input Stage Immune to EMIIEEE Transactions on Electromagnetic Compatibility, 2007
- Efficient reduction of electromagnetic interference effects in operational amplifiersElectronics Letters, 2007
- EMI resisting CMOS differential pair structureElectronics Letters, 2006
- Robust Design of Low EMI Susceptibility CMOS OpAmpIEEE Transactions on Electromagnetic Compatibility, 2004
- Op-amps and startup circuits for CMOS bandgap references with near 1-V supplyIEEE Journal of Solid-State Circuits, 2002
- Effect of conducted EMI on the DC performance ofoperationalamplifiersElectronics Letters, 1994