Semiconductor grain-boundary admittance: Theory
Author:
- 15 July 1984
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 30 (2) , 795-802
Abstract
The electrical admittance due to majority carriers in semiconductor bicrystals is calculated as a function of frequency and applied dc voltage. At low frequencies the admittance is controlled by charge trapping at the grain boundary which modulates the thermionic emission current across the boundary. The admittance does not generally obey a simple Debye-type form, although in most cases it is similar. Examples for the frequency and voltage dependence of the admittance are given for two energy distributions of the grain-boundary trap states.Keywords
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