Dynamic on-State Resistance Test and Evaluation of GaN Power Devices Under Hard- and Soft-Switching Conditions by Double and Multiple Pulses
- 6 June 2018
- journal article
- research article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Power Electronics
- Vol. 34 (2) , 1044-1053
Abstract
The dynamic on-state resistance (R$_{\text{DSON}}$) behavior of commercial GaN devices is very important for a GaN-based converter. Since the zero voltage switching techniques are popular in high-frequency power conversion, a dynamic R$_{\text{DSON}}$ test board integrating both hard and soft switching test circuits is built in this work. Two types of commercial GaN devices are tested and compared under hard and soft switching conditions by double-pulse and multi-pulse test modes, respectively. It has been found that their dynamic R$_{\text{DSON}}$ exhibit different behaviors depending on the off-state voltage and frequency under hard and soft switching conditions due to different device technologies, which should be taken fully into account for GaN-based converter design and loss estimation. In order to simulate the R$_{\text{DSON}}$ behavior in a steady-state operating converter, a multi-pulse measurement has been implemented, the results of which are compared with that of double-pulse test. Furthermore, the primary trapping mechanisms responsible for dynamic R$_{\text{DSON}}$ increase under different switching conditions are identified and verified by numerical device simulation using Silvaco TCAD tool.Keywords
Funding Information
- National Natural Science Foundation of China (51522704, 51477154)
- Zhejiang Natural Science Outstanding Young Scholar Foundation (LR18070001)
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