Hydrogen Plasma Treated p-GaN Gate HEMTs Integration for DC-DC Converter
- 14 August 2024
- journal article
- research article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters
- Vol. 45 (10) , 1756-1759
Abstract
This article presents a monolithic integrated circuit (IC) platform based on the p-GaN gated HEMT technology with a hydrogen plasma treatment (H-treated) process. A 48 V DC-DC power conversion at a switching frequency of 1 MHz is realized. The peripheral enhancement/depletion (E/D-) mode devices formed circuit components, and monolithically integrated with the power device. This is the first H-treated p-GaN platform for the monolithic GaN mixed-signal power IC, the D-mode device will employ the H-treated p-GaN layer as the gate dielectric, with no additional insulator layer. The corresponding ASM-HEMT models have been calibrated for the computer-aided circuit design. Excellent agreement between simulation and static/dynamic experimental results have also been verified with inverters and comparators.Keywords
Funding Information
- National Key Research and Development Program of China (2022YFB3604400)
- Science and Technology Program of Suzhou (SYG202131)
- Youth Innovation Promotion Association of the Chinese Academy of Sciences (2020321)
- National Natural Science Foundation of China (2020321, 92163204)
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