Effect of gamma-ray irradiation on the characteristics of 6H silicon carbide metal-oxide-semiconductor field effect transistor with hydrogen-annealed gate oxide
Authors:
- 27 August 2001
- journal article
- conference paper
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 90 (6) , 3038-3041
Abstract
The effects of gamma-ray (γ-ray) irradiation on the channel mobility of enhancement-type n-channel 6H silicon carbide (SiC) metal-oxide-semiconductor field effect transistors (MOSFETs) with gate oxides annealed in a hydrogen atmosphere after pyrogenic oxidation were studied. Irradiation induced interface traps produced in the MOSFETs were evaluated using the associated change in the subthreshold-current curve. It was found that the MOSFET channel mobility depended on the net number of radiation-induced interface traps. By a detailed comparison with the radiation response of silicon MOSFETs, 6H–SiC MOSFETs are shown to exhibit a channel mobility with a much higher radiation resistance.Keywords
This publication has 14 references indexed in Scilit:
- Influence of Post-Oxidation Annealing on Electrical Characteristics in 6H-SiC MOSFETsMaterials Science Forum, 2000
- γ-Ray irradiation effects on 6H-SiC MOSFETMaterials Science and Engineering: B, 1999
- Detailed investigation of n-channel enhancement 6H-SiC MOSFETsIEEE Transactions on Electron Devices, 1999
- Generation of Interface Traps and Oxide-Trapped Charge in 6H-SiC Metal-Oxide-Semiconductor Transistors by Gamma-Ray IrradiationJapanese Journal of Applied Physics, 1998
- Generation Mechanisms of Trapped Charges in Oxide Layers of 6H-SiC MOS Structures Irradiated with Gamma-RaysMaterials Science Forum, 1998
- Depth profile of trapped charges in oxide layer of 6H-SiC metal–oxide–semiconductor structuresJournal of Applied Physics, 1996
- ARXPS studies of SiO2-SiC interfaces and oxidation of 6H SiC single crystal Si-(001) and C-(001) surfacesJournal of Materials Research, 1994
- Comparison of 6H-SiC, 3C-SiC, and Si for power devicesIEEE Transactions on Electron Devices, 1993
- Effects of gamma-ray irradiation on cubic silicon carbide metal-oxide-semiconductor structureJournal of Applied Physics, 1991
- High-field transport in wide-band-gap semiconductorsPhysical Review B, 1975