Reliability of GaN HEMTs: Degradation Mechanisms, Multi-Field Coupling Effects, and Optimization Strategies
- 1 January 2026
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Devices Reviews
- Vol. 3, 333-349
Abstract
No abstract availableFunding Information
- National Natural Science Foundation of China (62374062)
- National Natural Science Foundation of Guangdong Province of China (2023B1515120071)
- Science and Technology Program of Guangdong Province of China (2023A0505050131)
- Science and Technology Program of Guangzhou, China (2024A04J6456)
- Characteristic Innovation Project of universities in Guangdong Province (2023KTSCX028)
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