Atomic layer deposition of TiO2 and Al‐doped TiO2 films on Ir substrates for ultralow leakage currents
- 20 June 2011
- journal article
- research article
- Published by Wiley in Physica Status Solidi (RRL) – Rapid Research Letters
- Vol. 5 (8) , 262-264
Abstract
TiO2 and Al‐doped TiO2 (ATO) films were grown on Ir substrates by atomic layer deposition using O3 as the oxygen source. With increasing O3 feeding time, the crystalline structure of the TiO2 films was transformed from anatase to rutile. Above an O3 feeding time of 35 s, the films crystallized as only rutile due to the formation of IrO2 layer at the interface. The TiO2 and ATO films showed higher dielectric constants of 78 and 51, respectively. The films on Ir showed superior leakage properties compared to the films on Ru due to the high work‐function of Ir.Keywords
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