Enabling Monolithic SiC Power ICs: A Lateral PiN Diode Technology with Inter-Device Trench Isolation

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Abstract
This work describes the fabrication and characterization of a novel lateral 4H-SiC PiN diode featuring inter-device isolation technology for power integrated circuits (ICs). The device’s architecture includes thick SiO2 blocking layers and inter-device trench isolation structures, enabling effective electrical isolation between power devices and control circuitry on a single chip. The devices demonstrate good isolation performance, with inter-device leakage currents below 5 nA at a reverse bias of 200 V. The diodes keep reverse leakage current low (<1 μA at 20 V), but exhibit non-distinct turn-on behavior. This is mostly due to the too-shallow N+ and P+ ion implantation region and high series resistance. A monolithically integrated bridge circuit operating at 50 Hz and 200 Hz validates the integration approach; however, large forward voltage drops show that the high series resistance at the device level affects overall conversion efficiency. The transfer length method (TLM) characterization reveals high sheet and contact resistances, which are responsible for the conduction limitations in the PiN diode forward performance. This study establishes the foundation for a lateral SiC device technology with promising inter-device isolation capabilities, as well as the bridge circuit built based on the lateral PiN diodes, which shows the potential of this technology for future monolithic power IC applications.
Funding Information
  • Swedish National Space Agency (2020-00261)

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