Effects of reliability screens on MOS charge trapping
Authors:
- M.R. ShaneyfeltMSM.R. Shaneyfelt
- P.S. WinokurPWP.S. Winokur
- D.M. FleetwoodDFD.M. Fleetwood
- J.R. SchwankJSJ.R. Schwank
- R.A. ReberRRR.A. Reber
- 1 June 1996
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Nuclear Science
- Vol. 43 (3) , 865-872
Abstract
No abstract availableThis publication has 22 references indexed in Scilit:
- Effects of interface traps and border traps on MOS postirradiation annealing responseIEEE Transactions on Nuclear Science, 1995
- Plastic packaging and burn-in effects on ionizing dose response in CMOS microcircuitsIEEE Transactions on Nuclear Science, 1995
- Effects of burn-in on radiation hardnessIEEE Transactions on Nuclear Science, 1994
- Accounting for time-dependent effects on CMOS total-dose response in space environmentsRadiation Physics and Chemistry, 1994
- Wafer-level radiation testing for hardness assuranceIEEE Transactions on Nuclear Science, 1991
- Strategies for lot acceptance testing using CMOS transistors and ICsIEEE Transactions on Nuclear Science, 1989
- Theory and application of dual-transistor charge separation analysisIEEE Transactions on Nuclear Science, 1989
- Diffusion of radiolytic molecular hydrogen as a mechanism for the post-irradiation buildup of interface states in SiO2-on-Si structuresJournal of Applied Physics, 1985
- Correlation of Radiation Effects in Transistors and Integrated CircuitsIEEE Transactions on Nuclear Science, 1985
- Physical Mechanisms Contributing to Device "Rebound"IEEE Transactions on Nuclear Science, 1984