Thermal Characterization of 650 V GaN HEMTs on 200 mm Engineered Substrates
Open Access
- 23 February 2026
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters
- Vol. 47 (4) , 676-679
Abstract
The thermal characteristics of large area GaN HEMTs on 200 mm QST engineered substrates are compared to those on GaN-on-Si. The thermal conductivity (TC) of the superlattice (SL) epitaxial buffer layers and the buried oxide layer (BOX) on the QST substrates are extracted through Raman thermography combined with 3-D finite element method (FEM) thermal simulations. The thermal resistance of large area transistors on QST is up ~1/3 lower than equivalent transistors on GaN-on-Si substrates. Transient device thermal simulation also demonstrates that QST substrates are advantageous for thermal management during switching operations, despite the buried oxide layer.Keywords
Funding Information
- Royal Academy of Engineering through the Chair in Emerging Technologies Scheme (EP/Z531091)
- Innovation and Knowledge Centre REWIRE funded by the Engineering and Physical Sciences Research Council (EP/Z531091)
This publication has 12 references indexed in Scilit:
- Time-dependent conduction mechanisms in reversed stepped superlattice layers of GaN HEMTs on 200 mm engineered substratesApplied Physics Letters, 2024
- Development and analysis of thick GaN drift layers on 200 mm CTE-matched substrate for vertical device processingScientific Reports, 2023
- Fundamentals of CTE-matched QST® substrate technology2022
- Epitaxial buffer structures grown on 200 mm engineering substrates for 1200 V E-mode HEMT applicationApplied Physics Letters, 2022
- Thermal characterization of GaN lateral power HEMTs on Si, SOI, and poly-AlN substratesMicroelectronics Reliability, 2021
- The 2018 GaN power electronics roadmapJournal of Physics D: Applied Physics, 2018
- GaN-on-Si Power Technology: Devices and ApplicationsIEEE Transactions on Electron Devices, 2017
- A Review of Raman Thermography for Electronic and Opto-Electronic Device Measurement With Submicron Spatial and Nanosecond Temporal ResolutionIEEE Transactions on Device and Materials Reliability, 2016
- Low thermal resistance GaN-on-diamond transistors characterized by three-dimensional Raman thermography mappingApplied Physics Letters, 2014
- Measurement of temperature in active high-power AlGaN/GaN HFETs using Raman spectroscopyIEEE Electron Device Letters, 2002