Towards Design-Technology Co-Optimization for Nanosheet Transistors With Backside Contact
- 18 August 2025
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Nanotechnology
- Vol. 24 (1536125X) , 439-444
Abstract
Nanosheet transistors has emerged as a potential structure of semiconductor technology. The introduction of Wrapped-Around Contact (WAC) and Backside Power Delivery Network, particularly the Backside Contact (BSC) in nanosheet transistors, has effectively promotes further scaling. This work contributes to design technology co-optimization (DTCO) for BSC technology by comprehensively exploring the impact of structural innovation, process parameters and dimension parameters. Through electro-thermal coupling simulations, we reveal the significant advantages of Backside Contact with WAC structure in terms of electrothermal properties compared to conventional structures. We also investigate the impact of contact resistivity, contact thermal resistivity, sheet width and number on device and circuit performance. This work provides an inspiration to optimize electro-thermal performance under advanced nodes.Keywords
Funding Information
- National Key Research and Development Program of China (2023YFB4402204)
- National Natural Science Foundation of China (T2293704, T2293700)
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