Influence of Fin Width on the Total Dose Behavior of p-Channel Bulk MuGFETs
- 17 February 2010
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters
- Vol. 31 (3) , 243-245
Abstract
A first assessment of the total dose behavior of bulk p-multiple-gate field-effect transistors (MuGFETs) is reported, and special attention is given to the effect of the fin width on the radiation behavior. It was found that the effect of radiation-induced traps in the shallow trench isolation is larger when the fin width decreases. This is in contrast to the total dose behavior of SOI MuGFETs.Keywords
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