Cor Claeys

TCAD finite-element process simulations have been performed on Ge-channel n and pMOSFETs with embedded source/drain stressors or a strained Ge channel on a relaxed SiGe strain relaxed buffer (SRB), respectively, and compared with nanobeam diffraction strain measurements. While there is overall a good agreement between the simulated and experimental strain profiles, some deviations may occur, due to the presence of extended defects in the strain relaxed Ge buffer layers. This highlights the importance of selection of a strain-free reference in the relaxed Ge or SiGe SRB.

A first assessment of the total dose behavior of bulk p-multiple-gate field-effect transistors (MuGFETs) is reported, and special attention is given to the effect of the fin width on the radiation behavior. It was found that the effect of radiation-induced traps in the shallow trench isolation is larger when the fin width decreases. This is in contrast to the total dose behavior of SOI MuGFETs.

The electrostatic-discharge sensitivity of fully depleted SOI MOSFETs with ultrathin silicon body and ultrathin gate oxide is studied. An original and detailed electrical analysis is carried out in order to investigate the degradation of the electrical DC parameters and classify the observed failure modes and mechanisms. The impact of device geometry and strain engineering is also analyzed.

The origin of the low-frequency noise in graded- channel silicon-on-insulator nMOSFET is studied as a function of the back-gate bias at a low drain-to-source bias. It is shown that an excess noise peak that is correlated with the peak in the transconductance can be observed. This excess noise is due to a generation-recombination component in the low-frequency range, which is suppressed when the back gate is in accumulation mode.