Investigation of ZrGe Schottky source/drain contacts for Ge p-channel MOSFETs

Authors:
  • HYH. Yang
    H. Yang
  • JGJ. Gao
    J. Gao
  • HNH. Nakashima
    H. Nakashima

Abstract
No abstract available
Funding Information
  • Science and Technology Innovation Project (Y3293UM130)
  • Science and Technology Development Project (Y3453UM130)
  • Science and Technology Innovation Project (Y3CX1SS143)
  • National Natural Science Foundation of China (61306125)

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