Investigation of ZrGe Schottky source/drain contacts for Ge p-channel MOSFETs
Authors:
- H. YangHYH. Yang
- J. GaoJGJ. Gao
- H. NakashimaHNH. Nakashima
- 1 October 2014
- journal article
- Published by Elsevier in Materials Science in Semiconductor Processing
- Vol. 26, 614-619
Abstract
No abstract availableKeywords
Funding Information
- Science and Technology Innovation Project (Y3293UM130)
- Science and Technology Development Project (Y3453UM130)
- Science and Technology Innovation Project (Y3CX1SS143)
- National Natural Science Foundation of China (61306125)
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